Air bridge based planar hybrid technology for microwave and millimeterwave applications

E. Wasige; G. Kompa; F. van Raay; I. W. Rangelow; W. Scholz; F. Shi; R. Kassing; R. Meyer; M. C. Amann

Air bridge based planar hybrid technology for microwave and millimeterwave applications

E. Wasige
, G. Kompa
, F. van Raay
, I. W. Rangelow
, W. Scholz
, F. Shi
, R. Kassing
, R. Meyer
, M. C. Amann

Information Systems

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (GaAs FETs) are integrated in high resistivity silicon substrates with a vertical precision of better than 2 μm and lateral tolerances less than 10 μm. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. The basic features of the proposed technology are presented here.

Original language	English
Pages (from-to)	925-928
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA Duration: 8 Jun 1997 → 13 Jun 1997

Cite this

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title = "Air bridge based planar hybrid technology for microwave and millimeterwave applications",

abstract = "A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (GaAs FETs) are integrated in high resistivity silicon substrates with a vertical precision of better than 2 μm and lateral tolerances less than 10 μm. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. The basic features of the proposed technology are presented here.",

author = "E. Wasige and G. Kompa and \{van Raay\}, F. and Rangelow, \{I. W.\} and W. Scholz and F. Shi and R. Kassing and R. Meyer and Amann, \{M. C.\}",

year = "1997",

language = "English",

volume = "2",

pages = "925--928",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) ; Conference date: 08-06-1997 Through 13-06-1997",

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TY - JOUR

T1 - Air bridge based planar hybrid technology for microwave and millimeterwave applications

AU - Wasige, E.

AU - Kompa, G.

AU - van Raay, F.

AU - Rangelow, I. W.

AU - Scholz, W.

AU - Shi, F.

AU - Kassing, R.

AU - Meyer, R.

AU - Amann, M. C.

PY - 1997

Y1 - 1997

N2 - A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (GaAs FETs) are integrated in high resistivity silicon substrates with a vertical precision of better than 2 μm and lateral tolerances less than 10 μm. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. The basic features of the proposed technology are presented here.

AB - A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (GaAs FETs) are integrated in high resistivity silicon substrates with a vertical precision of better than 2 μm and lateral tolerances less than 10 μm. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. The basic features of the proposed technology are presented here.

UR - https://www.scopus.com/pages/publications/0030704885

M3 - Conference article

AN - SCOPUS:0030704885

SN - 0149-645X

VL - 2

SP - 925

EP - 928

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 8 June 1997 through 13 June 1997

ER -

Air bridge based planar hybrid technology for microwave and millimeterwave applications

Abstract

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