Air bridge based planar hybrid technology for microwave and millimeterwave applications

E. Wasige, G. Kompa, F. Van Raay, I. Schmale, I. W. Rangelow, W. Scholz, F. Shi, R. Kassing, R. Meyer, M. C. Amann, P. Hudek

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (e.g. GaAs FETs) are glued with an epoxy resin in openings micromachined in a high resistivity silicon substrate with a vertical precision of better than 2 ¿m and lateral tolerances less than 10 ¿m. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. Preliminary results show very promising high frequency properties of this assembly.

Original languageEnglish
Pages375-378
Number of pages4
DOIs
StatePublished - 1997
Externally publishedYes
Event1997 27th European Microwave Conference, EuMC 1997 - Jerusalem, Israel
Duration: 8 Sep 199712 Sep 1997

Conference

Conference1997 27th European Microwave Conference, EuMC 1997
Country/TerritoryIsrael
CityJerusalem
Period8/09/9712/09/97

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