Abstract
Using an atomic force microscope a ring geometry with self-aligned in-plane gates was directly written into a GaAs/AlGaAs heterostructure. Transport measurements in the open regime show only one transmitting mode and Aharonov-Bohm oscillations with more than 50% modulation are observed in the conductance. The tuning via in-plane gates allows one to study the Aharonov-Bohm effect in the whole range from the open ring to the Coulomb-blockade regime.
Original language | English |
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Pages (from-to) | L22-L24 |
Journal | Semiconductor Science and Technology |
Volume | 17 |
Issue number | 5 |
DOIs | |
State | Published - May 2002 |