TY - GEN
T1 - Aging-aware voltage scaling
AU - Van Santen, Victor M.
AU - Amrouch, Hussam
AU - Parihar, Narendra
AU - Mahapatra, Souvik
AU - Henkel, Jörg
N1 - Publisher Copyright:
© 2016 EDAA.
PY - 2016/4/25
Y1 - 2016/4/25
N2 - As feature sizes of transistors began to approach atomic levels, aging effects have become one of major concerns when it comes to reliability. Recently, aging effects have become a subject to voltage scaling as the latter entered the sub-μs regime. Hence, aging shifted from a sole long-term (as treated by state-of-the-art) to a short and long-term reliability challenge. This paper interrelates both aging and voltage scaling to explore and quantify for the first time the short-term effects of aging. We propose "aging-awareness" with respect to voltage scaling which is indispensable to sustain runtime reliability. Otherwise, transient errors, caused by the short-term effects of aging, may occur. Compared to state-of-the-art, our aging-aware voltage scaling optimizes for both short-term and long-term aging effects at marginal guardband overhead.
AB - As feature sizes of transistors began to approach atomic levels, aging effects have become one of major concerns when it comes to reliability. Recently, aging effects have become a subject to voltage scaling as the latter entered the sub-μs regime. Hence, aging shifted from a sole long-term (as treated by state-of-the-art) to a short and long-term reliability challenge. This paper interrelates both aging and voltage scaling to explore and quantify for the first time the short-term effects of aging. We propose "aging-awareness" with respect to voltage scaling which is indispensable to sustain runtime reliability. Otherwise, transient errors, caused by the short-term effects of aging, may occur. Compared to state-of-the-art, our aging-aware voltage scaling optimizes for both short-term and long-term aging effects at marginal guardband overhead.
UR - http://www.scopus.com/inward/record.url?scp=84973621984&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84973621984
T3 - Proceedings of the 2016 Design, Automation and Test in Europe Conference and Exhibition, DATE 2016
SP - 576
EP - 581
BT - Proceedings of the 2016 Design, Automation and Test in Europe Conference and Exhibition, DATE 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th Design, Automation and Test in Europe Conference and Exhibition, DATE 2016
Y2 - 14 March 2016 through 18 March 2016
ER -