TY - GEN
T1 - Advancing CMOS with carbon electronics
AU - Kreupl, Franz
PY - 2014
Y1 - 2014
N2 - A fresh look on carbon-based transistor channel materials like single-walled carbon nanotubes (CNT) and graphene nanoribbons (GNR) in future electronic applications is given. Although theoretical predictions initially promised that GNR (which do have a bandgap) would perform equally well as transistors based on CNTs, experimental evidence for the well-behaved transistor action is missing up to now. Possible reasons for the shortcomings as well as possible solutions to overcome the performance gap will be addressed. In contrast to GNR, short channel CNT field effect transistors (FET) demonstrate in the experimental realization almost ideal transistor characteristics down to very low bias voltages. Therefore, CNT-FETs are clear frontrunners in the search of a future CMOS switch, that will enable further voltage and gate length scaling. Essential features which distinguish CNT-FETs from alternative solution will be discussed and benchmarked. Finally, the gap to industrial wafer-level scale SWCNT integration will be addressed and strategies for achieving highly aligned carbon nanotube fabrics will be discussed. Without such a high yield wafer-scale integration, SWCNT circuits will be an illusional dream.
AB - A fresh look on carbon-based transistor channel materials like single-walled carbon nanotubes (CNT) and graphene nanoribbons (GNR) in future electronic applications is given. Although theoretical predictions initially promised that GNR (which do have a bandgap) would perform equally well as transistors based on CNTs, experimental evidence for the well-behaved transistor action is missing up to now. Possible reasons for the shortcomings as well as possible solutions to overcome the performance gap will be addressed. In contrast to GNR, short channel CNT field effect transistors (FET) demonstrate in the experimental realization almost ideal transistor characteristics down to very low bias voltages. Therefore, CNT-FETs are clear frontrunners in the search of a future CMOS switch, that will enable further voltage and gate length scaling. Essential features which distinguish CNT-FETs from alternative solution will be discussed and benchmarked. Finally, the gap to industrial wafer-level scale SWCNT integration will be addressed and strategies for achieving highly aligned carbon nanotube fabrics will be discussed. Without such a high yield wafer-scale integration, SWCNT circuits will be an illusional dream.
KW - carbon nanotube
KW - electronic
KW - graphene
KW - integration
KW - nanoribbon
KW - transistor
UR - http://www.scopus.com/inward/record.url?scp=84903835284&partnerID=8YFLogxK
U2 - 10.7873/DATE2014.250
DO - 10.7873/DATE2014.250
M3 - Conference contribution
AN - SCOPUS:84903835284
SN - 9783981537024
T3 - Proceedings -Design, Automation and Test in Europe, DATE
BT - Proceedings - Design, Automation and Test in Europe, DATE 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th Design, Automation and Test in Europe, DATE 2014
Y2 - 24 March 2014 through 28 March 2014
ER -