Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy

J. W. Lee; D. Schuh; M. Bichler; G. Abstreiter

doi:10.1016/j.apsusc.2004.01.033

Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy

J. W. Lee, D. Schuh, M. Bichler, G. Abstreiter

Natural Sciences

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16 Scopus citations

Abstract

Various characteristics of RHEED patterns were examined with respect to geometrical and crystallographic point of views including chevron patterns frequently found after the growth of self-assembled InAs quantum dots, streak lines and Laue circles from GaAs wafer surface. These three patterns offer clear understanding of surface morphology change during or after dot growth. Various patterns and geometrical relationship between those patterns, coupled with specific surface reconstruction structures of GaAs (0 0 1) surface were studied.

Original language	English
Pages (from-to)	306-312
Number of pages	7
Journal	Applied Surface Science
Volume	228
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.01.033
State	Published - 30 Apr 2004

Keywords

Molecular beam epitaxy
Nanomaterials
Reflection high energy electron diffraction

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10.1016/j.apsusc.2004.01.033

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abstract = "Various characteristics of RHEED patterns were examined with respect to geometrical and crystallographic point of views including chevron patterns frequently found after the growth of self-assembled InAs quantum dots, streak lines and Laue circles from GaAs wafer surface. These three patterns offer clear understanding of surface morphology change during or after dot growth. Various patterns and geometrical relationship between those patterns, coupled with specific surface reconstruction structures of GaAs (0 0 1) surface were studied.",

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AU - Bichler, M.

AU - Abstreiter, G.

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N2 - Various characteristics of RHEED patterns were examined with respect to geometrical and crystallographic point of views including chevron patterns frequently found after the growth of self-assembled InAs quantum dots, streak lines and Laue circles from GaAs wafer surface. These three patterns offer clear understanding of surface morphology change during or after dot growth. Various patterns and geometrical relationship between those patterns, coupled with specific surface reconstruction structures of GaAs (0 0 1) surface were studied.

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KW - Molecular beam epitaxy

KW - Nanomaterials

KW - Reflection high energy electron diffraction

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ER -

Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy

Abstract

Keywords

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