TY - JOUR
T1 - Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy
AU - Lee, J. W.
AU - Schuh, D.
AU - Bichler, M.
AU - Abstreiter, G.
PY - 2004/4/30
Y1 - 2004/4/30
N2 - Various characteristics of RHEED patterns were examined with respect to geometrical and crystallographic point of views including chevron patterns frequently found after the growth of self-assembled InAs quantum dots, streak lines and Laue circles from GaAs wafer surface. These three patterns offer clear understanding of surface morphology change during or after dot growth. Various patterns and geometrical relationship between those patterns, coupled with specific surface reconstruction structures of GaAs (0 0 1) surface were studied.
AB - Various characteristics of RHEED patterns were examined with respect to geometrical and crystallographic point of views including chevron patterns frequently found after the growth of self-assembled InAs quantum dots, streak lines and Laue circles from GaAs wafer surface. These three patterns offer clear understanding of surface morphology change during or after dot growth. Various patterns and geometrical relationship between those patterns, coupled with specific surface reconstruction structures of GaAs (0 0 1) surface were studied.
KW - Molecular beam epitaxy
KW - Nanomaterials
KW - Reflection high energy electron diffraction
UR - http://www.scopus.com/inward/record.url?scp=1942485790&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2004.01.033
DO - 10.1016/j.apsusc.2004.01.033
M3 - Article
AN - SCOPUS:1942485790
SN - 0169-4332
VL - 228
SP - 306
EP - 312
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-4
ER -