Admittance Spectroscopy on Irradiated GaAs Component Cells: Defect Analysis and Characterization

Carmine Pellegrino, Alessio Gagliardi, Claus G. Zimmermann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Temperature-dependent admittance spectroscopy is shown to be a valuable method to perform defect characterization in standardized 2 cm × 2 cm component cells, representative of the individual sub-cells in the triple-junction architecture GaInP/GaAs/Ge. The admittance spectra of the GaAs subcell irradiated with protons and electrons is analyzed in the range 90 K < T < 300 K. The signature of the irradiation-induced defect H1 is detected, located 0.29 eV above the valence band. An admittance model including the effect of a Gaussian-like distribution of defects in the band gap is adopted to fit the experimental data and to extract the electrical parameters of H1. Moreover, the signature of a second thermally-activated process is detected and ascribed to majority carrier transport over the barrier formed at the back-surface field region of the cell. A simple multi-conductance model is used to fit the measured admittance data and to extract the barrier height.

Original languageEnglish
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages156-159
Number of pages4
ISBN (Electronic)9781728161150
DOIs
StatePublished - 14 Jun 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/TerritoryCanada
CityCalgary
Period15/06/2021/08/20

Keywords

  • GaAs solar cell
  • admittance spectroscopy
  • displacement damage dose
  • hetero-barrier
  • irradiation-induced defect

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