Addressing single nitrogen-vacancy centers in diamond with transparent in-plane gate structures

Moritz V. Hauf, Patrick Simon, Nabeel Aslam, Matthias Pfender, Philipp Neumann, Sébastien Pezzagna, Jan Meijer, Jörg Wrachtrup, Martin Stutzmann, Friedemann Reinhard, José A. Garrido

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

For many applications of the nitrogen-vacancy (NV) center in diamond, the understanding and active control of its charge state is highly desired. In this work, we demonstrate the reversible manipulation of the charge state of a single NV center from NV- across NV0 to a nonfluorescent, dark state by using an all-diamond in-plane gate nanostructure. Applying a voltage to the in-plane gate structure can influence the energy band bending sufficiently for charge state conversion of NV centers. These diamond in-plane structures can function as transparent top gates, enabling the distant control of the charge state of NV centers tens of micrometers away from the nanostructure.

Original languageEnglish
Pages (from-to)2359-2364
Number of pages6
JournalNano Letters
Volume14
Issue number5
DOIs
StatePublished - 14 May 2014

Keywords

  • Diamond
  • charge state control
  • in-plane gate field-effect transistor
  • nitrogen-vacancy center
  • qubit
  • surface termination

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