Addressing single nitrogen-vacancy centers in diamond with transparent in-plane gate structures

Moritz V. Hauf; Patrick Simon; Nabeel Aslam; Matthias Pfender; Philipp Neumann; Sébastien Pezzagna; Jan Meijer; Jörg Wrachtrup; Martin Stutzmann; Friedemann Reinhard; José A. Garrido

doi:10.1021/nl4047619

Addressing single nitrogen-vacancy centers in diamond with transparent in-plane gate structures

Moritz V. Hauf, Patrick Simon, Nabeel Aslam, Matthias Pfender, Philipp Neumann, Sébastien Pezzagna, Jan Meijer, Jörg Wrachtrup, Martin Stutzmann, Friedemann Reinhard, José A. Garrido

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

For many applications of the nitrogen-vacancy (NV) center in diamond, the understanding and active control of its charge state is highly desired. In this work, we demonstrate the reversible manipulation of the charge state of a single NV center from NV^- across NV⁰ to a nonfluorescent, dark state by using an all-diamond in-plane gate nanostructure. Applying a voltage to the in-plane gate structure can influence the energy band bending sufficiently for charge state conversion of NV centers. These diamond in-plane structures can function as transparent top gates, enabling the distant control of the charge state of NV centers tens of micrometers away from the nanostructure.

Original language	English
Pages (from-to)	2359-2364
Number of pages	6
Journal	Nano Letters
Volume	14
Issue number	5
DOIs	https://doi.org/10.1021/nl4047619
State	Published - 14 May 2014

Keywords

Diamond
charge state control
in-plane gate field-effect transistor
nitrogen-vacancy center
qubit
surface termination

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10.1021/nl4047619

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abstract = "For many applications of the nitrogen-vacancy (NV) center in diamond, the understanding and active control of its charge state is highly desired. In this work, we demonstrate the reversible manipulation of the charge state of a single NV center from NV- across NV0 to a nonfluorescent, dark state by using an all-diamond in-plane gate nanostructure. Applying a voltage to the in-plane gate structure can influence the energy band bending sufficiently for charge state conversion of NV centers. These diamond in-plane structures can function as transparent top gates, enabling the distant control of the charge state of NV centers tens of micrometers away from the nanostructure.",

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AU - Hauf, Moritz V.

AU - Simon, Patrick

AU - Aslam, Nabeel

AU - Pfender, Matthias

AU - Neumann, Philipp

AU - Pezzagna, Sébastien

AU - Meijer, Jan

AU - Wrachtrup, Jörg

AU - Stutzmann, Martin

AU - Reinhard, Friedemann

AU - Garrido, José A.

PY - 2014/5/14

Y1 - 2014/5/14

N2 - For many applications of the nitrogen-vacancy (NV) center in diamond, the understanding and active control of its charge state is highly desired. In this work, we demonstrate the reversible manipulation of the charge state of a single NV center from NV- across NV0 to a nonfluorescent, dark state by using an all-diamond in-plane gate nanostructure. Applying a voltage to the in-plane gate structure can influence the energy band bending sufficiently for charge state conversion of NV centers. These diamond in-plane structures can function as transparent top gates, enabling the distant control of the charge state of NV centers tens of micrometers away from the nanostructure.

AB - For many applications of the nitrogen-vacancy (NV) center in diamond, the understanding and active control of its charge state is highly desired. In this work, we demonstrate the reversible manipulation of the charge state of a single NV center from NV- across NV0 to a nonfluorescent, dark state by using an all-diamond in-plane gate nanostructure. Applying a voltage to the in-plane gate structure can influence the energy band bending sufficiently for charge state conversion of NV centers. These diamond in-plane structures can function as transparent top gates, enabling the distant control of the charge state of NV centers tens of micrometers away from the nanostructure.

KW - Diamond

KW - charge state control

KW - in-plane gate field-effect transistor

KW - nitrogen-vacancy center

KW - qubit

KW - surface termination

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Addressing single nitrogen-vacancy centers in diamond with transparent in-plane gate structures

Abstract

Keywords

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