Abstract
Radiation-induced defects formed via electronic subsystem in solid Ne were studied combining thermally stimulated luminescence (TSL) and thermally stimulated exoelectron emission (TSEE) techniques. In the present paper the TSL and TSEE measurements of solid Ne were performed for the first time. The whole set of obtained experimental data suggests that in solid Ne at the temperature 10.5 K the annihilation of electronically induced defects occurs. Comparing experimental data with theoretical calculation the atomic configuration of radiation-induced defects was elucidated.
| Original language | English |
|---|---|
| Pages (from-to) | 235-241 |
| Number of pages | 7 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5507 |
| DOIs | |
| State | Published - 2004 |
| Event | XVI International Conference on Spectroscopy of Molecules and Crystals - Sevastopol, Ukraine Duration: 25 May 2003 → 1 Jun 2003 |
Keywords
- Activation spectroscopy
- Exciton self-trapping
- Radiation-induced defects
- Rare gas solids
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