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Activation spectroscopy of solid Ne

  • I. V. Khyzhniy
  • , O. N. Grigorashchenko
  • , A. N. Ogurtsov
  • , E. V. Savchenko
  • , M. Frankowski
  • , A. M. Smith-Gicklhorn
  • , V. E. Bondybey
  • B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine
  • V. N. Karazin Kharkiv National University
  • Technical University of Munich
  • Polish Academy of Sciences

Research output: Contribution to journalConference articlepeer-review

Abstract

Radiation-induced defects formed via electronic subsystem in solid Ne were studied combining thermally stimulated luminescence (TSL) and thermally stimulated exoelectron emission (TSEE) techniques. In the present paper the TSL and TSEE measurements of solid Ne were performed for the first time. The whole set of obtained experimental data suggests that in solid Ne at the temperature 10.5 K the annihilation of electronically induced defects occurs. Comparing experimental data with theoretical calculation the atomic configuration of radiation-induced defects was elucidated.

Original languageEnglish
Pages (from-to)235-241
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5507
DOIs
StatePublished - 2004
EventXVI International Conference on Spectroscopy of Molecules and Crystals - Sevastopol, Ukraine
Duration: 25 May 20031 Jun 2003

Keywords

  • Activation spectroscopy
  • Exciton self-trapping
  • Radiation-induced defects
  • Rare gas solids

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