Activated Auger processes and their wavelength dependence in type-I mid-infrared laser diodes

Timothy D. Eales, Markus C. Amann, Igor P. Marko, Barnabas A. Ikyo, Alf R. Adams, Alexander Andrejew, Kristijonas Vizbaras, Leon Shterengas, Gregory Belenky, Igor Vurgaftman, Jerry R. Meyer, Stephen J. Sweeney

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Type-I quantum well (QW) lasers based on the GaSb material system show attractive characteristics in the mid-infrared [1]. However, as the wavelength (λ) increases in the range of 2-4 μm their performance begins to deteriorate due to increasing Auger recombination [2]. In the Auger process, the energy released from an electron-hole recombination is transferred to a third carrier. In order to develop strategies to suppress Auger recombination, it is crucial to understand the magnitude and nature of the dominant Auger recombination pathway, and their dependencies on the operating λ and temperature (T).

Original languageEnglish
Title of host publicationThe European Conference on Lasers and Electro-Optics, CLEO_Europe_2019
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781728104690
StatePublished - 2019
EventThe European Conference on Lasers and Electro-Optics, CLEO_Europe_2019 - Munich, Germany
Duration: 23 Jun 201927 Jun 2019

Publication series

NameOptics InfoBase Conference Papers
VolumePart F140-CLEO_Europe 2019
ISSN (Electronic)2162-2701

Conference

ConferenceThe European Conference on Lasers and Electro-Optics, CLEO_Europe_2019
Country/TerritoryGermany
CityMunich
Period23/06/1927/06/19

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