Accurate determination of optical bandgap and lattice parameters of Zn 1-xMgxO epitaxial films (0 ≤ x ≤ 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

Bernhard Laumer; Fabian Schuster; Martin Stutzmann; Andreas Bergmaier; Günther Dollinger; Martin Eickhoff

doi:10.1063/1.4811693

Accurate determination of optical bandgap and lattice parameters of Zn _1-xMg_xO epitaxial films (0 ≤ x ≤ 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

Bernhard Laumer, Fabian Schuster, Martin Stutzmann, Andreas Bergmaier, Günther Dollinger, Martin Eickhoff

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Zn_1-xMg_xO epitaxial films with Mg concentrations 0 ≤ x ≤ 0.3 were grown by plasma-assisted molecular beam epitaxy on a-plane sapphire substrates. Precise determination of the Mg concentration x was performed by elastic recoil detection analysis. The bandgap energy was extracted from absorption measurements with high accuracy taking electron-hole interaction and exciton-phonon complexes into account. From these results a linear relationship between bandgap energy and Mg concentration is established for x ≤ 0.3. Due to alloy disorder, the increase of the photoluminescence emission energy with Mg concentration is less pronounced. An analysis of the lattice parameters reveals that the epitaxial films grow biaxially strained on a-plane sapphire.

Original language	English
Article number	233512
Journal	Journal of Applied Physics
Volume	113
Issue number	23
DOIs	https://doi.org/10.1063/1.4811693
State	Published - 21 Jun 2013

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title = "Accurate determination of optical bandgap and lattice parameters of Zn 1-xMgxO epitaxial films (0 ≤ x ≤ 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire",

abstract = "Zn1-xMgxO epitaxial films with Mg concentrations 0 ≤ x ≤ 0.3 were grown by plasma-assisted molecular beam epitaxy on a-plane sapphire substrates. Precise determination of the Mg concentration x was performed by elastic recoil detection analysis. The bandgap energy was extracted from absorption measurements with high accuracy taking electron-hole interaction and exciton-phonon complexes into account. From these results a linear relationship between bandgap energy and Mg concentration is established for x ≤ 0.3. Due to alloy disorder, the increase of the photoluminescence emission energy with Mg concentration is less pronounced. An analysis of the lattice parameters reveals that the epitaxial films grow biaxially strained on a-plane sapphire.",

author = "Bernhard Laumer and Fabian Schuster and Martin Stutzmann and Andreas Bergmaier and G{\"u}nther Dollinger and Martin Eickhoff",

year = "2013",

month = jun,

day = "21",

doi = "10.1063/1.4811693",

language = "English",

volume = "113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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}

Accurate determination of optical bandgap and lattice parameters of Zn _1-xMg_xO epitaxial films (0 ≤ x ≤ 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire. / Laumer, Bernhard; Schuster, Fabian; Stutzmann, Martin et al.
In: Journal of Applied Physics, Vol. 113, No. 23, 233512, 21.06.2013.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Accurate determination of optical bandgap and lattice parameters of Zn 1-xMgxO epitaxial films (0 ≤ x ≤ 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

AU - Laumer, Bernhard

AU - Schuster, Fabian

AU - Stutzmann, Martin

AU - Bergmaier, Andreas

AU - Dollinger, Günther

AU - Eickhoff, Martin

PY - 2013/6/21

Y1 - 2013/6/21

N2 - Zn1-xMgxO epitaxial films with Mg concentrations 0 ≤ x ≤ 0.3 were grown by plasma-assisted molecular beam epitaxy on a-plane sapphire substrates. Precise determination of the Mg concentration x was performed by elastic recoil detection analysis. The bandgap energy was extracted from absorption measurements with high accuracy taking electron-hole interaction and exciton-phonon complexes into account. From these results a linear relationship between bandgap energy and Mg concentration is established for x ≤ 0.3. Due to alloy disorder, the increase of the photoluminescence emission energy with Mg concentration is less pronounced. An analysis of the lattice parameters reveals that the epitaxial films grow biaxially strained on a-plane sapphire.

AB - Zn1-xMgxO epitaxial films with Mg concentrations 0 ≤ x ≤ 0.3 were grown by plasma-assisted molecular beam epitaxy on a-plane sapphire substrates. Precise determination of the Mg concentration x was performed by elastic recoil detection analysis. The bandgap energy was extracted from absorption measurements with high accuracy taking electron-hole interaction and exciton-phonon complexes into account. From these results a linear relationship between bandgap energy and Mg concentration is established for x ≤ 0.3. Due to alloy disorder, the increase of the photoluminescence emission energy with Mg concentration is less pronounced. An analysis of the lattice parameters reveals that the epitaxial films grow biaxially strained on a-plane sapphire.

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Accurate determination of optical bandgap and lattice parameters of Zn _1-xMg_xO epitaxial films (0 ≤ x ≤ 0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

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