Abstract
Fast light-induced degradation of amorphous silicon p-i-n solar cells has been investigated by replacing cw illumination by light pulses of the same average intensity. This method allows us to evaluate the long-term device performance with exposure times of the order of minutes and avoids complication due to cell temperature increase.
| Original language | English |
|---|---|
| Pages (from-to) | 1709-1711 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 60 |
| Issue number | 14 |
| DOIs | |
| State | Published - 1992 |
| Externally published | Yes |