Accelerated stability test for amorphous silicon solar cells

M. C. Rossi; M. S. Brandt; M. Stutzmann

doi:10.1063/1.107193

Accelerated stability test for amorphous silicon solar cells

M. C. Rossi, M. S. Brandt, M. Stutzmann

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Fast light-induced degradation of amorphous silicon p-i-n solar cells has been investigated by replacing cw illumination by light pulses of the same average intensity. This method allows us to evaluate the long-term device performance with exposure times of the order of minutes and avoids complication due to cell temperature increase.

Original language	English
Pages (from-to)	1709-1711
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	14
DOIs	https://doi.org/10.1063/1.107193
State	Published - 1992
Externally published	Yes

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10.1063/1.107193

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title = "Accelerated stability test for amorphous silicon solar cells",

abstract = "Fast light-induced degradation of amorphous silicon p-i-n solar cells has been investigated by replacing cw illumination by light pulses of the same average intensity. This method allows us to evaluate the long-term device performance with exposure times of the order of minutes and avoids complication due to cell temperature increase.",

author = "Rossi, {M. C.} and Brandt, {M. S.} and M. Stutzmann",

year = "1992",

doi = "10.1063/1.107193",

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volume = "60",

pages = "1709--1711",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Accelerated stability test for amorphous silicon solar cells

AU - Rossi, M. C.

AU - Brandt, M. S.

AU - Stutzmann, M.

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Y1 - 1992

N2 - Fast light-induced degradation of amorphous silicon p-i-n solar cells has been investigated by replacing cw illumination by light pulses of the same average intensity. This method allows us to evaluate the long-term device performance with exposure times of the order of minutes and avoids complication due to cell temperature increase.

AB - Fast light-induced degradation of amorphous silicon p-i-n solar cells has been investigated by replacing cw illumination by light pulses of the same average intensity. This method allows us to evaluate the long-term device performance with exposure times of the order of minutes and avoids complication due to cell temperature increase.

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U2 - 10.1063/1.107193

DO - 10.1063/1.107193

M3 - Article

AN - SCOPUS:0006659794

SN - 0003-6951

VL - 60

SP - 1709

EP - 1711

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Accelerated stability test for amorphous silicon solar cells

Abstract

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