Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy

O. Ambacher; D. Brunner; R. Dimitrov; M. Stutzmann; A. Sohmer; F. Scholz

doi:10.1143/jjap.37.745

Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy

O. Ambacher, D. Brunner, R. Dimitrov, M. Stutzmann, A. Sohmer, F. Scholz

TUM Emeriti of Excellence

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Abstract

Photothermal deflection spectroscopy (PDS) is used to study the absorption of GaN/InGaN/GaN double heterostructures in the energy range from 0.6 to 3.8eV. The heterostructures containing 1-77-nm-thick InGaN single quantum wells were deposited by chemical vapour deposition from organometallic precursors. They are measured to investigate the absorption coefficient, bandgap, indium concentration and fluctuation of the quantum wells. Abandgap increase of hexagonal In_xGa_1-xN (x ≈ 0.14) of 60 meV is observed with decreasing well thicknesses from 15 to 1 nm. The distribution of In-concentration of the In_xGa_1-xN layers was estimated from the slope of the absorption coefficient versus photon energy for energies below the bandgap and found to be Gaussian with a full width of half maximum of Δx= 0.03.

Original language	English
Pages (from-to)	745-752
Number of pages	8
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.37.745
State	Published - Mar 1998

Keywords

Absorption
Bandgap
InGaN single quantum well

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title = "Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy",

abstract = "Photothermal deflection spectroscopy (PDS) is used to study the absorption of GaN/InGaN/GaN double heterostructures in the energy range from 0.6 to 3.8eV. The heterostructures containing 1-77-nm-thick InGaN single quantum wells were deposited by chemical vapour deposition from organometallic precursors. They are measured to investigate the absorption coefficient, bandgap, indium concentration and fluctuation of the quantum wells. Abandgap increase of hexagonal InxGa1-xN (x ≈ 0.14) of 60 meV is observed with decreasing well thicknesses from 15 to 1 nm. The distribution of In-concentration of the InxGa1-xN layers was estimated from the slope of the absorption coefficient versus photon energy for energies below the bandgap and found to be Gaussian with a full width of half maximum of Δx= 0.03.",

keywords = "Absorption, Bandgap, InGaN single quantum well",

author = "O. Ambacher and D. Brunner and R. Dimitrov and M. Stutzmann and A. Sohmer and F. Scholz",

year = "1998",

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T1 - Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy

AU - Ambacher, O.

AU - Brunner, D.

AU - Dimitrov, R.

AU - Stutzmann, M.

AU - Sohmer, A.

AU - Scholz, F.

PY - 1998/3

Y1 - 1998/3

N2 - Photothermal deflection spectroscopy (PDS) is used to study the absorption of GaN/InGaN/GaN double heterostructures in the energy range from 0.6 to 3.8eV. The heterostructures containing 1-77-nm-thick InGaN single quantum wells were deposited by chemical vapour deposition from organometallic precursors. They are measured to investigate the absorption coefficient, bandgap, indium concentration and fluctuation of the quantum wells. Abandgap increase of hexagonal InxGa1-xN (x ≈ 0.14) of 60 meV is observed with decreasing well thicknesses from 15 to 1 nm. The distribution of In-concentration of the InxGa1-xN layers was estimated from the slope of the absorption coefficient versus photon energy for energies below the bandgap and found to be Gaussian with a full width of half maximum of Δx= 0.03.

AB - Photothermal deflection spectroscopy (PDS) is used to study the absorption of GaN/InGaN/GaN double heterostructures in the energy range from 0.6 to 3.8eV. The heterostructures containing 1-77-nm-thick InGaN single quantum wells were deposited by chemical vapour deposition from organometallic precursors. They are measured to investigate the absorption coefficient, bandgap, indium concentration and fluctuation of the quantum wells. Abandgap increase of hexagonal InxGa1-xN (x ≈ 0.14) of 60 meV is observed with decreasing well thicknesses from 15 to 1 nm. The distribution of In-concentration of the InxGa1-xN layers was estimated from the slope of the absorption coefficient versus photon energy for energies below the bandgap and found to be Gaussian with a full width of half maximum of Δx= 0.03.

KW - Absorption

KW - Bandgap

KW - InGaN single quantum well

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U2 - 10.1143/jjap.37.745

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SN - 0021-4922

VL - 37

SP - 745

EP - 752

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 3 A

ER -

Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy

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