A wide range temperature stable integrated current reference

Matthias Radecker; Alois Knoll; Robert Kocaman; Viktor Buguszewicz; Ralf Rudolf

doi:10.1109/ESSCIRC.2003.1257202

A wide range temperature stable integrated current reference

Matthias Radecker, Alois Knoll, Robert Kocaman, Viktor Buguszewicz, Ralf Rudolf

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

A current reference integrated circuit was built in a 2 micron CMOS process base on SIMOX technology, without the need of external trimming, to provide 19.5μA. the overall error was less than +/-1% (< 67 ppm/k) over 240 K temperature range from -40 to 200 °C (Vdd10V), at a power consumption of less than 1.5 mW. From -15 to 90°C the TC was < 12 ppm/K, derived by higher order temperature compensation. The temperature dependence of the diode parameters is cancelled out against the temperature coefficient of the resistors. The error of the absolute current value was +/-5% (30 circuits from two different wafers). The circuit of 0.3 mm² contains p-channel and n-channel MOS transistors, pin-diodes, and p+ resistors. It is applicable for oscillator and filter frequency stability, and for precise time delay circuits, especially in smart power and high temperature applications.

Original language	English
Article number	1257202
Pages (from-to)	583-586
Number of pages	4
Journal	European Solid-State Circuits Conference
DOIs	https://doi.org/10.1109/ESSCIRC.2003.1257202
State	Published - 2003
Externally published	Yes
Event	29th European Solid-State Circuits Conference, ESSCIRC 2003 - Estoril, Portugal Duration: 16 Sep 2003 → 18 Sep 2003

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10.1109/ESSCIRC.2003.1257202

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title = "A wide range temperature stable integrated current reference",

abstract = "A current reference integrated circuit was built in a 2 micron CMOS process base on SIMOX technology, without the need of external trimming, to provide 19.5μA. the overall error was less than +/-1% (< 67 ppm/k) over 240 K temperature range from -40 to 200 °C (Vdd10V), at a power consumption of less than 1.5 mW. From -15 to 90°C the TC was < 12 ppm/K, derived by higher order temperature compensation. The temperature dependence of the diode parameters is cancelled out against the temperature coefficient of the resistors. The error of the absolute current value was +/-5% (30 circuits from two different wafers). The circuit of 0.3 mm2 contains p-channel and n-channel MOS transistors, pin-diodes, and p+ resistors. It is applicable for oscillator and filter frequency stability, and for precise time delay circuits, especially in smart power and high temperature applications.",

author = "Matthias Radecker and Alois Knoll and Robert Kocaman and Viktor Buguszewicz and Ralf Rudolf",

year = "2003",

doi = "10.1109/ESSCIRC.2003.1257202",

language = "English",

pages = "583--586",

journal = "European Solid-State Circuits Conference",

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publisher = "IEEE Computer Society",

note = "29th European Solid-State Circuits Conference, ESSCIRC 2003 ; Conference date: 16-09-2003 Through 18-09-2003",

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T1 - A wide range temperature stable integrated current reference

AU - Radecker, Matthias

AU - Knoll, Alois

AU - Kocaman, Robert

AU - Buguszewicz, Viktor

AU - Rudolf, Ralf

PY - 2003

Y1 - 2003

N2 - A current reference integrated circuit was built in a 2 micron CMOS process base on SIMOX technology, without the need of external trimming, to provide 19.5μA. the overall error was less than +/-1% (< 67 ppm/k) over 240 K temperature range from -40 to 200 °C (Vdd10V), at a power consumption of less than 1.5 mW. From -15 to 90°C the TC was < 12 ppm/K, derived by higher order temperature compensation. The temperature dependence of the diode parameters is cancelled out against the temperature coefficient of the resistors. The error of the absolute current value was +/-5% (30 circuits from two different wafers). The circuit of 0.3 mm2 contains p-channel and n-channel MOS transistors, pin-diodes, and p+ resistors. It is applicable for oscillator and filter frequency stability, and for precise time delay circuits, especially in smart power and high temperature applications.

AB - A current reference integrated circuit was built in a 2 micron CMOS process base on SIMOX technology, without the need of external trimming, to provide 19.5μA. the overall error was less than +/-1% (< 67 ppm/k) over 240 K temperature range from -40 to 200 °C (Vdd10V), at a power consumption of less than 1.5 mW. From -15 to 90°C the TC was < 12 ppm/K, derived by higher order temperature compensation. The temperature dependence of the diode parameters is cancelled out against the temperature coefficient of the resistors. The error of the absolute current value was +/-5% (30 circuits from two different wafers). The circuit of 0.3 mm2 contains p-channel and n-channel MOS transistors, pin-diodes, and p+ resistors. It is applicable for oscillator and filter frequency stability, and for precise time delay circuits, especially in smart power and high temperature applications.

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SN - 1930-8833

SP - 583

EP - 586

JO - European Solid-State Circuits Conference

JF - European Solid-State Circuits Conference

M1 - 1257202

T2 - 29th European Solid-State Circuits Conference, ESSCIRC 2003

Y2 - 16 September 2003 through 18 September 2003

ER -

A wide range temperature stable integrated current reference

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