A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes

Yaren Huang, Tobias Erlbacher, Jonas Buettner, Gerhard Wachutka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

18 Scopus citations

Abstract

There is a trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. This paper explains the physical mechanisms underlying this trade-off and identifies the relevant design parameters. The dependencies of this trade-off on the layout parameters and physical parameters are described by analytical relations (compact model). An equivalent lumped element circuit is set up for an intuitive interpretation of the functional components of a SiC MPS diode. Eventually, we investigate several novel device structures with a view to improving the forward characteristics under regular and overcurrent operating conditions.

Original languageEnglish
Title of host publicationProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages63-66
Number of pages4
ISBN (Electronic)9781467387682
DOIs
StatePublished - 25 Jul 2016
Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
Duration: 12 Jun 201616 Jun 2016

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2016-July
ISSN (Print)1063-6854

Conference

Conference28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Country/TerritoryCzech Republic
CityPrague
Period12/06/1616/06/16

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