A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes

Yaren Huang; Tobias Erlbacher; Jonas Buettner; Gerhard Wachutka

doi:10.1109/ISPSD.2016.7520778

A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes

Yaren Huang, Tobias Erlbacher, Jonas Buettner, Gerhard Wachutka

Computation, Information and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

22 Scopus citations

Abstract

There is a trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. This paper explains the physical mechanisms underlying this trade-off and identifies the relevant design parameters. The dependencies of this trade-off on the layout parameters and physical parameters are described by analytical relations (compact model). An equivalent lumped element circuit is set up for an intuitive interpretation of the functional components of a SiC MPS diode. Eventually, we investigate several novel device structures with a view to improving the forward characteristics under regular and overcurrent operating conditions.

Original language	English
Title of host publication	Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	63-66
Number of pages	4
ISBN (Electronic)	9781467387682
DOIs	https://doi.org/10.1109/ISPSD.2016.7520778
State	Published - 25 Jul 2016
Event	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic Duration: 12 Jun 2016 → 16 Jun 2016

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2016-July
ISSN (Print)	1063-6854

Conference

Conference	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Country/Territory	Czech Republic
City	Prague
Period	12/06/16 → 16/06/16

Access to Document

10.1109/ISPSD.2016.7520778

Cite this

Huang, Y., Erlbacher, T., Buettner, J., & Wachutka, G. (2016). A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 63-66). Article 7520778 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520778

Huang, Yaren ; Erlbacher, Tobias ; Buettner, Jonas et al. / A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 63-66 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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title = "A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes",

abstract = "There is a trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. This paper explains the physical mechanisms underlying this trade-off and identifies the relevant design parameters. The dependencies of this trade-off on the layout parameters and physical parameters are described by analytical relations (compact model). An equivalent lumped element circuit is set up for an intuitive interpretation of the functional components of a SiC MPS diode. Eventually, we investigate several novel device structures with a view to improving the forward characteristics under regular and overcurrent operating conditions.",

author = "Yaren Huang and Tobias Erlbacher and Jonas Buettner and Gerhard Wachutka",

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Huang, Y, Erlbacher, T, Buettner, J & Wachutka, G 2016, A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. in Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016., 7520778, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2016-July, Institute of Electrical and Electronics Engineers Inc., pp. 63-66, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 12/06/16. https://doi.org/10.1109/ISPSD.2016.7520778

A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. / Huang, Yaren; Erlbacher, Tobias; Buettner, Jonas et al.
Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 63-66 7520778 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - There is a trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. This paper explains the physical mechanisms underlying this trade-off and identifies the relevant design parameters. The dependencies of this trade-off on the layout parameters and physical parameters are described by analytical relations (compact model). An equivalent lumped element circuit is set up for an intuitive interpretation of the functional components of a SiC MPS diode. Eventually, we investigate several novel device structures with a view to improving the forward characteristics under regular and overcurrent operating conditions.

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Huang Y, Erlbacher T, Buettner J, Wachutka G. A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 63-66. 7520778. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2016.7520778

A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes

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