A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand

Ralf Becker; Anjana Devi; Jurij Weiß; Ulrike Weckenmann; Manuela Winter; Christoph Kiener; Hans Werner Becker; Roland A. Fischer

A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand

Ralf Becker
, Anjana Devi
, Jurij Weiß
, Ulrike Weckenmann
, Manuela Winter
, Christoph Kiener
, Hans Werner Becker
, Roland A. Fischer

Max-Planck-lnstitut für Kohlenforschung
Max-Planck-Institut Für Kohlenforschung

Research output: Contribution to journal › Article › peer-review

Abstract

Pure copper metal thin films were grown on SiO₂/Si(100) substrates by metal-organic (MO) CVD in a horizontal cold-wall reactor employing the two metal-organic compounds, Cu(OCHMeCH₂NR₂)₂, where R = Et (1) and R = Me (2) as precursors. Thermogravimetric analyses proved them to be convenient compounds for the deposition of copper without a reducing agent. Depositions were carried out at various substrate temperatures in the range 230-350 °C. X-ray diffraction (XRD) indicated that the resulting films were highly crystalline and showed a strong (111) preferred orientation, which increased with increasing deposition temperature. Photoelectron spectroscopy (XPS) revealed that copper films deposited at 230 °C and 260 °C consisted solely of metallic copper with no detectable carbon, nitrogen, or oxygen contamination. Copper films obtained from 1 at 260 °C had a resistivity of 2.16 μΩ cm.

Original language	English
Pages (from-to)	149-156
Number of pages	8
Journal	Advanced Materials
Volume	15
Issue number	12
State	Published - 17 Jun 2003
Externally published	Yes

Keywords

Amino alkoxides
Copper
MOCVD
Thermal analysis
Thin films

Cite this

@article{398a6ffaad664368bc23880668751820,

title = "A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand",

abstract = "Pure copper metal thin films were grown on SiO2/Si(100) substrates by metal-organic (MO) CVD in a horizontal cold-wall reactor employing the two metal-organic compounds, Cu(OCHMeCH2NR2)2, where R = Et (1) and R = Me (2) as precursors. Thermogravimetric analyses proved them to be convenient compounds for the deposition of copper without a reducing agent. Depositions were carried out at various substrate temperatures in the range 230-350 °C. X-ray diffraction (XRD) indicated that the resulting films were highly crystalline and showed a strong (111) preferred orientation, which increased with increasing deposition temperature. Photoelectron spectroscopy (XPS) revealed that copper films deposited at 230 °C and 260 °C consisted solely of metallic copper with no detectable carbon, nitrogen, or oxygen contamination. Copper films obtained from 1 at 260 °C had a resistivity of 2.16 μΩ cm.",

keywords = "Amino alkoxides, Copper, MOCVD, Thermal analysis, Thin films",

author = "Ralf Becker and Anjana Devi and Jurij Wei{\ss} and Ulrike Weckenmann and Manuela Winter and Christoph Kiener and Becker, \{Hans Werner\} and Fischer, \{Roland A.\}",

year = "2003",

month = jun,

day = "17",

language = "English",

volume = "15",

pages = "149--156",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "12",

}

A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand. / Becker, Ralf; Devi, Anjana; Weiß, Jurij et al.
In: Advanced Materials, Vol. 15, No. 12, 17.06.2003, p. 149-156.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides

T2 - Tuning the thermal properties of the precursor by small variations of the ligand

AU - Becker, Ralf

AU - Devi, Anjana

AU - Weiß, Jurij

AU - Weckenmann, Ulrike

AU - Winter, Manuela

AU - Kiener, Christoph

AU - Becker, Hans Werner

AU - Fischer, Roland A.

PY - 2003/6/17

Y1 - 2003/6/17

N2 - Pure copper metal thin films were grown on SiO2/Si(100) substrates by metal-organic (MO) CVD in a horizontal cold-wall reactor employing the two metal-organic compounds, Cu(OCHMeCH2NR2)2, where R = Et (1) and R = Me (2) as precursors. Thermogravimetric analyses proved them to be convenient compounds for the deposition of copper without a reducing agent. Depositions were carried out at various substrate temperatures in the range 230-350 °C. X-ray diffraction (XRD) indicated that the resulting films were highly crystalline and showed a strong (111) preferred orientation, which increased with increasing deposition temperature. Photoelectron spectroscopy (XPS) revealed that copper films deposited at 230 °C and 260 °C consisted solely of metallic copper with no detectable carbon, nitrogen, or oxygen contamination. Copper films obtained from 1 at 260 °C had a resistivity of 2.16 μΩ cm.

AB - Pure copper metal thin films were grown on SiO2/Si(100) substrates by metal-organic (MO) CVD in a horizontal cold-wall reactor employing the two metal-organic compounds, Cu(OCHMeCH2NR2)2, where R = Et (1) and R = Me (2) as precursors. Thermogravimetric analyses proved them to be convenient compounds for the deposition of copper without a reducing agent. Depositions were carried out at various substrate temperatures in the range 230-350 °C. X-ray diffraction (XRD) indicated that the resulting films were highly crystalline and showed a strong (111) preferred orientation, which increased with increasing deposition temperature. Photoelectron spectroscopy (XPS) revealed that copper films deposited at 230 °C and 260 °C consisted solely of metallic copper with no detectable carbon, nitrogen, or oxygen contamination. Copper films obtained from 1 at 260 °C had a resistivity of 2.16 μΩ cm.

KW - Amino alkoxides

KW - Copper

KW - MOCVD

KW - Thermal analysis

KW - Thin films

UR - https://www.scopus.com/pages/publications/0038042357

M3 - Article

AN - SCOPUS:0038042357

SN - 0935-9648

VL - 15

SP - 149

EP - 156

JO - Advanced Materials

JF - Advanced Materials

IS - 12

ER -

A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand

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Keywords

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