A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand

Ralf Becker; Anjana Devi; Jurij Weiß; Ulrike Weckenmann; Manuela Winter; Christoph Kiener; Hans Werner Becker; Roland A. Fischer

A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand

Ralf Becker, Anjana Devi, Jurij Weiß, Ulrike Weckenmann, Manuela Winter, Christoph Kiener, Hans Werner Becker, Roland A. Fischer

Research output: Contribution to journal › Article › peer-review

Abstract

Pure copper metal thin films were grown on SiO₂/Si(100) substrates by metal-organic (MO) CVD in a horizontal cold-wall reactor employing the two metal-organic compounds, Cu(OCHMeCH₂NR₂)₂, where R = Et (1) and R = Me (2) as precursors. Thermogravimetric analyses proved them to be convenient compounds for the deposition of copper without a reducing agent. Depositions were carried out at various substrate temperatures in the range 230-350 °C. X-ray diffraction (XRD) indicated that the resulting films were highly crystalline and showed a strong (111) preferred orientation, which increased with increasing deposition temperature. Photoelectron spectroscopy (XPS) revealed that copper films deposited at 230 °C and 260 °C consisted solely of metallic copper with no detectable carbon, nitrogen, or oxygen contamination. Copper films obtained from 1 at 260 °C had a resistivity of 2.16 μΩ cm.

Original language	English
Pages (from-to)	149-156
Number of pages	8
Journal	Advanced Materials
Volume	15
Issue number	12
State	Published - 17 Jun 2003
Externally published	Yes

Keywords

Amino alkoxides
Copper
MOCVD
Thermal analysis
Thin films

Cite this

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title = "A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand",

abstract = "Pure copper metal thin films were grown on SiO2/Si(100) substrates by metal-organic (MO) CVD in a horizontal cold-wall reactor employing the two metal-organic compounds, Cu(OCHMeCH2NR2)2, where R = Et (1) and R = Me (2) as precursors. Thermogravimetric analyses proved them to be convenient compounds for the deposition of copper without a reducing agent. Depositions were carried out at various substrate temperatures in the range 230-350 °C. X-ray diffraction (XRD) indicated that the resulting films were highly crystalline and showed a strong (111) preferred orientation, which increased with increasing deposition temperature. Photoelectron spectroscopy (XPS) revealed that copper films deposited at 230 °C and 260 °C consisted solely of metallic copper with no detectable carbon, nitrogen, or oxygen contamination. Copper films obtained from 1 at 260 °C had a resistivity of 2.16 μΩ cm.",

keywords = "Amino alkoxides, Copper, MOCVD, Thermal analysis, Thin films",

author = "Ralf Becker and Anjana Devi and Jurij Wei{\ss} and Ulrike Weckenmann and Manuela Winter and Christoph Kiener and Becker, {Hans Werner} and Fischer, {Roland A.}",

year = "2003",

month = jun,

day = "17",

language = "English",

volume = "15",

pages = "149--156",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "12",

}

A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand. / Becker, Ralf; Devi, Anjana; Weiß, Jurij et al.
In: Advanced Materials, Vol. 15, No. 12, 17.06.2003, p. 149-156.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides

T2 - Tuning the thermal properties of the precursor by small variations of the ligand

AU - Becker, Ralf

AU - Devi, Anjana

AU - Weiß, Jurij

AU - Weckenmann, Ulrike

AU - Winter, Manuela

AU - Kiener, Christoph

AU - Becker, Hans Werner

AU - Fischer, Roland A.

PY - 2003/6/17

Y1 - 2003/6/17

N2 - Pure copper metal thin films were grown on SiO2/Si(100) substrates by metal-organic (MO) CVD in a horizontal cold-wall reactor employing the two metal-organic compounds, Cu(OCHMeCH2NR2)2, where R = Et (1) and R = Me (2) as precursors. Thermogravimetric analyses proved them to be convenient compounds for the deposition of copper without a reducing agent. Depositions were carried out at various substrate temperatures in the range 230-350 °C. X-ray diffraction (XRD) indicated that the resulting films were highly crystalline and showed a strong (111) preferred orientation, which increased with increasing deposition temperature. Photoelectron spectroscopy (XPS) revealed that copper films deposited at 230 °C and 260 °C consisted solely of metallic copper with no detectable carbon, nitrogen, or oxygen contamination. Copper films obtained from 1 at 260 °C had a resistivity of 2.16 μΩ cm.

AB - Pure copper metal thin films were grown on SiO2/Si(100) substrates by metal-organic (MO) CVD in a horizontal cold-wall reactor employing the two metal-organic compounds, Cu(OCHMeCH2NR2)2, where R = Et (1) and R = Me (2) as precursors. Thermogravimetric analyses proved them to be convenient compounds for the deposition of copper without a reducing agent. Depositions were carried out at various substrate temperatures in the range 230-350 °C. X-ray diffraction (XRD) indicated that the resulting films were highly crystalline and showed a strong (111) preferred orientation, which increased with increasing deposition temperature. Photoelectron spectroscopy (XPS) revealed that copper films deposited at 230 °C and 260 °C consisted solely of metallic copper with no detectable carbon, nitrogen, or oxygen contamination. Copper films obtained from 1 at 260 °C had a resistivity of 2.16 μΩ cm.

KW - Amino alkoxides

KW - Copper

KW - MOCVD

KW - Thermal analysis

KW - Thin films

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SN - 0935-9648

VL - 15

SP - 149

EP - 156

JO - Advanced Materials

JF - Advanced Materials

IS - 12

ER -

A study on the metal-organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand

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Keywords

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