A status report on technology for carbon nanotube devices

The use of carbon nanotubes (CNT) for sub-10nm feature sizes of semiconductor devices because of its excellent electrical and mechanical properties is discussed. CNT have few structural defects which in combination with the high carbon-carbon bond strength produces tubes capable of withstanding temperatures up to 2800°C in vacuum and upto 700°C in air. It is found that the formation of undesirable, atomic thin oxide and organic layers between nanotubes and contact metal results in tunneling characteristic with high resistances and non-ohmic behavior.