A silicon-on-insulator vertical nanogap device for electrical transport measurements in aqueous electrolyte solution

Keyphrases

• Aqueous Electrolyte 100%
• Silicon-on-insulator 100%
• Electrical Transport Measurements 100%
• Nanogap 100%
• High-resolution 33%
• Natural Environment 33%
• Parallel Processing 33%
• Thermal Oxidation 33%
• Aqueous Solution 33%
• Current-voltage Characteristics 33%
• Material Layer 33%
• Process Technology 33%
• Layer Architecture 33%
• Metal Electrode 33%
• Micrometer Size 33%
• Polymer Layer 33%
• In Situ TEM 33%
• Sidewall 33%
• Vertically Oriented 33%
• Thin Metal Films 33%
• Buffer Solution 33%
• Material Process 33%
• Thin Film Evaporation 33%
• Conductance Measurement 33%
• Material Thickness 33%
• Nanogap Electrodes 33%
• Silicon Dioxide 33%
• Well-defined Materials 33%
• Silicon Processing 33%
• Base Substrate 33%
• Electrical Conductance 33%
• Recess Etching 33%
• Biomolecular Electronics 33%
• Plateau Structure 33%
• Cross-sectional TEM 33%
• Device-Measured 33%
• Applications in the Field 33%
• Passivated 33%
• Thin Oxides 33%
• Electrolyte Environment 33%
• Electrical Isolation 33%
• Access Window 33%

Material Science

• Silicon 100%
• Current Voltage Characteristics 33%
• Solution 33%
• Silicon Dioxide 33%
• Oxidation Reaction 33%
• Buffer Solution 33%
• Silicon on Insulator Material 33%
• Oxide Compound 33%
• Thin Films 33%