TY - GEN
T1 - A SiGe monolithically integrated 278 GHz push-push oscillator
AU - Wanner, Robert
AU - Lachner, Rudolf
AU - Olbrich, Gerhard R.
AU - Russer, Peter
PY - 2007
Y1 - 2007
N2 - In this paper we present a fully monolithically integrated J-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. The passive circuitry is realized by integrated transmission-line components, MIM-capacitors and TaN resistors. The frequency of the output signal can be tuned between 275.5 GHz and 279.6 GHz. This oscillator gives the highest output frequency for transistor based oscillators published up to now.
AB - In this paper we present a fully monolithically integrated J-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. The passive circuitry is realized by integrated transmission-line components, MIM-capacitors and TaN resistors. The frequency of the output signal can be tuned between 275.5 GHz and 279.6 GHz. This oscillator gives the highest output frequency for transistor based oscillators published up to now.
UR - http://www.scopus.com/inward/record.url?scp=34748914327&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2007.380420
DO - 10.1109/MWSYM.2007.380420
M3 - Conference contribution
AN - SCOPUS:34748914327
SN - 1424406889
SN - 9781424406883
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 333
EP - 336
BT - 2007 IEEE MTT-S International Microwave Symposium Digest
T2 - 2007 IEEE MTT-S International Microwave Symposium, IMS 2007
Y2 - 3 June 2007 through 8 June 2007
ER -