TY - GEN
T1 - A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter
AU - Round, S.
AU - Heldwein, M.
AU - Kolar, J.
AU - Hofsajer, I.
AU - Friedrichs, P.
PY - 2005
Y1 - 2005
N2 - Silicon carbide (SiC) power semiconductor devices are capable of being operated at higher voltages, frequencies and temperatures than silicon power devices. These SiC device capabilities will provide the power electronics designer with new possibilities to produce compact designs. Presently the JFET is the only controlled turn off/on SiC device that is close to commercialization and available as restricted samples. However the JFET is a normally-on device that requires a negative gate voltage to turn off. In order to correctly design a gate driver one must understand the characteristics of the JFET. This paper presents a description of the JFET semiconductor structure, and the SiC JFET's static and dynamic characteristics from room temperature to 200°C. A SiC JFET gate driver circuit is presented and its performance described. The proposed gate driver improves the switching performance of the JFET by operating the gate in avalanche during the off time.
AB - Silicon carbide (SiC) power semiconductor devices are capable of being operated at higher voltages, frequencies and temperatures than silicon power devices. These SiC device capabilities will provide the power electronics designer with new possibilities to produce compact designs. Presently the JFET is the only controlled turn off/on SiC device that is close to commercialization and available as restricted samples. However the JFET is a normally-on device that requires a negative gate voltage to turn off. In order to correctly design a gate driver one must understand the characteristics of the JFET. This paper presents a description of the JFET semiconductor structure, and the SiC JFET's static and dynamic characteristics from room temperature to 200°C. A SiC JFET gate driver circuit is presented and its performance described. The proposed gate driver improves the switching performance of the JFET by operating the gate in avalanche during the off time.
KW - Dynamic characteristic
KW - Gate driver
KW - High-temperature operation
KW - JFET
KW - Silicon carbide
KW - Static characteristic
UR - http://www.scopus.com/inward/record.url?scp=33745891203&partnerID=8YFLogxK
U2 - 10.1109/IAS.2005.1518341
DO - 10.1109/IAS.2005.1518341
M3 - Conference contribution
AN - SCOPUS:33745891203
SN - 0780392086
SN - 9780780392083
T3 - Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
SP - 410
EP - 416
BT - Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting
T2 - 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting
Y2 - 2 October 2005 through 6 October 2005
ER -