A schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

J. Sailer; V. Lang; G. Abstreiter; G. Tsuchiya; K. M. Itoh; J. W. Ager; E. E. Haller; D. Kupidura; D. Harbusch; S. Ludwig; D. Bougeard

doi:10.1002/pssr.200802275

A schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiya, K. M. Itoh, J. W. Ager, E. E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, D. Bougeard

Natural Sciences

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using ²⁸Si and ⁷⁰Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm²/(V s) at a sheet carrier density of 4.6 × 10¹¹ cm^-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.

Original language	English
Pages (from-to)	61-63
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	3
Issue number	2-3
DOIs	https://doi.org/10.1002/pssr.200802275
State	Published - 2009

Access to Document

10.1002/pssr.200802275

Cite this

@article{f3e99787e5c14b76916b11eaa9075b09,

title = "A schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure",

abstract = "We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/(V s) at a sheet carrier density of 4.6 × 1011 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.",

author = "J. Sailer and V. Lang and G. Abstreiter and G. Tsuchiya and Itoh, {K. M.} and Ager, {J. W.} and Haller, {E. E.} and D. Kupidura and D. Harbusch and S. Ludwig and D. Bougeard",

year = "2009",

doi = "10.1002/pssr.200802275",

language = "English",

volume = "3",

pages = "61--63",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "2-3",

}

TY - JOUR

T1 - A schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

AU - Sailer, J.

AU - Lang, V.

AU - Abstreiter, G.

AU - Tsuchiya, G.

AU - Itoh, K. M.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Kupidura, D.

AU - Harbusch, D.

AU - Ludwig, S.

AU - Bougeard, D.

PY - 2009

Y1 - 2009

N2 - We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/(V s) at a sheet carrier density of 4.6 × 1011 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.

AB - We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/(V s) at a sheet carrier density of 4.6 × 1011 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.

UR - http://www.scopus.com/inward/record.url?scp=70350642430&partnerID=8YFLogxK

U2 - 10.1002/pssr.200802275

DO - 10.1002/pssr.200802275

M3 - Article

AN - SCOPUS:70350642430

SN - 1862-6254

VL - 3

SP - 61

EP - 63

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 2-3

ER -

A schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

Abstract

Access to Document

Other files and links

Fingerprint

Cite this