A quantum dot infrared photodetector with lateral carrier transport

L. Chu; A. Zrenner; D. Bougeard; M. Bichler; G. Abstreiter

doi:10.1016/S1386-9477(01)00543-4

A quantum dot infrared photodetector with lateral carrier transport

L. Chu, A. Zrenner, D. Bougeard, M. Bichler, G. Abstreiter

Natural Sciences

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

In this contribution we present a normal-incidence quantum dot (QD) infrared detector structure. It is based on intra-conduction band transitions between the p-states of the QD and the wetting layer subband and lateral transport of photoexcited carriers in a channel next to the quantum dot layers. The photoresponse is peaked at 6.5 μm (186 meV) and reaches several A/W up to 60 K. The intrinsic detector response time is determined to be about 0.8 ms. Temperature and frequency dependence of the detector structure are discussed.

Original language	English
Pages (from-to)	301-304
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	13
Issue number	2-4
DOIs	https://doi.org/10.1016/S1386-9477(01)00543-4
State	Published - Mar 2002

Keywords

Intersubband
Photocurrent
Quantum dot

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10.1016/S1386-9477(01)00543-4

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T1 - A quantum dot infrared photodetector with lateral carrier transport

AU - Chu, L.

AU - Zrenner, A.

AU - Bougeard, D.

AU - Bichler, M.

AU - Abstreiter, G.

PY - 2002/3

Y1 - 2002/3

N2 - In this contribution we present a normal-incidence quantum dot (QD) infrared detector structure. It is based on intra-conduction band transitions between the p-states of the QD and the wetting layer subband and lateral transport of photoexcited carriers in a channel next to the quantum dot layers. The photoresponse is peaked at 6.5 μm (186 meV) and reaches several A/W up to 60 K. The intrinsic detector response time is determined to be about 0.8 ms. Temperature and frequency dependence of the detector structure are discussed.

AB - In this contribution we present a normal-incidence quantum dot (QD) infrared detector structure. It is based on intra-conduction band transitions between the p-states of the QD and the wetting layer subband and lateral transport of photoexcited carriers in a channel next to the quantum dot layers. The photoresponse is peaked at 6.5 μm (186 meV) and reaches several A/W up to 60 K. The intrinsic detector response time is determined to be about 0.8 ms. Temperature and frequency dependence of the detector structure are discussed.

KW - Intersubband

KW - Photocurrent

KW - Quantum dot

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U2 - 10.1016/S1386-9477(01)00543-4

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M3 - Article

AN - SCOPUS:0036492680

SN - 1386-9477

VL - 13

SP - 301

EP - 304

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

ER -

A quantum dot infrared photodetector with lateral carrier transport

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Keywords

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