A physics-based low frequency noise model for MOSFETs under periodic large signal excitation

Ralf Brederlow, Jeongwook Koh, Roland Thewes

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation. These observations are important for modern analog and RF circuits. The classically used low frequency noise models for circuit simulation are not able to explain this effect. In this paper, we extend the classical approach to non-equilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition, we present measurements which are in good agreement with the derived model, and suggest approaches to implement the model within standard compact models.

Original languageEnglish
Pages (from-to)668-673
Number of pages6
JournalSolid-State Electronics
Volume50
Issue number4
DOIs
StatePublished - Apr 2006
Externally publishedYes

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