A physics-based low frequency noise model for MOSFETs under periodic large signal excitation

Ralf Brederlow; Jeongwook Koh; Roland Thewes

doi:10.1109/ESSDER.2005.1546653

A physics-based low frequency noise model for MOSFETs under periodic large signal excitation

Ralf Brederlow, Jeongwook Koh, Roland Thewes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation ([1]-[5]). These observations can become very relevant for analog and RF circuit design ([3], [6]). The classically used low frequency noise models for circuit simulation are not able to explain the effect. In this paper, we extend the models to nonequilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition we will present measurements in good agreement with the derived model, and suggest how to implement it into standard compact models.

Original language	English
Title of host publication	Proceedings of ESSDERC 2005
Subtitle of host publication	35th European Solid-State Device Research Conference
Pages	333-336
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDER.2005.1546653
State	Published - 2005
Externally published	Yes
Event	ESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France Duration: 12 Sep 2005 → 16 Sep 2005

Publication series

Name	Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume	2005

Conference

Conference	ESSDERC 2005: 35th European Solid-State Device Research Conference
Country/Territory	France
City	Grenoble
Period	12/09/05 → 16/09/05

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10.1109/ESSDER.2005.1546653

Cite this

Brederlow, R., Koh, J., & Thewes, R. (2005). A physics-based low frequency noise model for MOSFETs under periodic large signal excitation. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 333-336). Article 1546653 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546653

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title = "A physics-based low frequency noise model for MOSFETs under periodic large signal excitation",

abstract = "In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation ([1]-[5]). These observations can become very relevant for analog and RF circuit design ([3], [6]). The classically used low frequency noise models for circuit simulation are not able to explain the effect. In this paper, we extend the models to nonequilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition we will present measurements in good agreement with the derived model, and suggest how to implement it into standard compact models.",

author = "Ralf Brederlow and Jeongwook Koh and Roland Thewes",

year = "2005",

doi = "10.1109/ESSDER.2005.1546653",

language = "English",

isbn = "0780392035",

series = "Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference",

pages = "333--336",

booktitle = "Proceedings of ESSDERC 2005",

note = "ESSDERC 2005: 35th European Solid-State Device Research Conference ; Conference date: 12-09-2005 Through 16-09-2005",

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Brederlow, R, Koh, J & Thewes, R 2005, A physics-based low frequency noise model for MOSFETs under periodic large signal excitation. in Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference., 1546653, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, vol. 2005, pp. 333-336, ESSDERC 2005: 35th European Solid-State Device Research Conference, Grenoble, France, 12/09/05. https://doi.org/10.1109/ESSDER.2005.1546653

A physics-based low frequency noise model for MOSFETs under periodic large signal excitation. / Brederlow, Ralf; Koh, Jeongwook; Thewes, Roland.
Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 333-336 1546653 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Koh, Jeongwook

AU - Thewes, Roland

PY - 2005

Y1 - 2005

N2 - In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation ([1]-[5]). These observations can become very relevant for analog and RF circuit design ([3], [6]). The classically used low frequency noise models for circuit simulation are not able to explain the effect. In this paper, we extend the models to nonequilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition we will present measurements in good agreement with the derived model, and suggest how to implement it into standard compact models.

AB - In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation ([1]-[5]). These observations can become very relevant for analog and RF circuit design ([3], [6]). The classically used low frequency noise models for circuit simulation are not able to explain the effect. In this paper, we extend the models to nonequilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition we will present measurements in good agreement with the derived model, and suggest how to implement it into standard compact models.

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A physics-based low frequency noise model for MOSFETs under periodic large signal excitation

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