A perpendicular spin torque switching based MRAM for the 28 nm technology node

U. K. Klostermann; M. Angerbauer; U. Grüning; F. Kreupl; M. Rührig; F. Dahmani; M. Kund; G. Müller

doi:10.1109/IEDM.2007.4418898

A perpendicular spin torque switching based MRAM for the 28 nm technology node

U. K. Klostermann, M. Angerbauer, U. Grüning, F. Kreupl, M. Rührig, F. Dahmani, M. Kund, G. Müller

Research output: Contribution to journal › Conference article › peer-review

29 Scopus citations

Abstract

We report on a novel spin torque select MRAM with perpendicular anisotropy (P-ST-MRAM). The P-ST concept offers superior scalability performance at the 28 nm technology node compared to the conventional in-plane spin torque MRAM (I-ST-MRAM). The critical programming currents (- 30 μA) are low, allowing a cell layout as small as 6 F². In addition, data retention is significantly better for P-ST enabling a non-volatile, high density product for the 28 nm node. Estimations on write performance promise high write endurance and high write speed. Circuit simulations with improved read circuit demonstrate array read access time ∼30 ns at sensing currents ∼10 μA.

Original language	English
Article number	4418898
Pages (from-to)	187-190
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2007.4418898
State	Published - 2007
Externally published	Yes
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 10 Dec 2007 → 12 Dec 2007

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title = "A perpendicular spin torque switching based MRAM for the 28 nm technology node",

abstract = "We report on a novel spin torque select MRAM with perpendicular anisotropy (P-ST-MRAM). The P-ST concept offers superior scalability performance at the 28 nm technology node compared to the conventional in-plane spin torque MRAM (I-ST-MRAM). The critical programming currents (- 30 μA) are low, allowing a cell layout as small as 6 F2. In addition, data retention is significantly better for P-ST enabling a non-volatile, high density product for the 28 nm node. Estimations on write performance promise high write endurance and high write speed. Circuit simulations with improved read circuit demonstrate array read access time ∼30 ns at sensing currents ∼10 μA.",

author = "Klostermann, {U. K.} and M. Angerbauer and U. Gr{\"u}ning and F. Kreupl and M. R{\"u}hrig and F. Dahmani and M. Kund and G. M{\"u}ller",

year = "2007",

doi = "10.1109/IEDM.2007.4418898",

language = "English",

pages = "187--190",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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TY - JOUR

T1 - A perpendicular spin torque switching based MRAM for the 28 nm technology node

AU - Klostermann, U. K.

AU - Angerbauer, M.

AU - Grüning, U.

AU - Kreupl, F.

AU - Rührig, M.

AU - Dahmani, F.

AU - Kund, M.

AU - Müller, G.

PY - 2007

Y1 - 2007

N2 - We report on a novel spin torque select MRAM with perpendicular anisotropy (P-ST-MRAM). The P-ST concept offers superior scalability performance at the 28 nm technology node compared to the conventional in-plane spin torque MRAM (I-ST-MRAM). The critical programming currents (- 30 μA) are low, allowing a cell layout as small as 6 F2. In addition, data retention is significantly better for P-ST enabling a non-volatile, high density product for the 28 nm node. Estimations on write performance promise high write endurance and high write speed. Circuit simulations with improved read circuit demonstrate array read access time ∼30 ns at sensing currents ∼10 μA.

AB - We report on a novel spin torque select MRAM with perpendicular anisotropy (P-ST-MRAM). The P-ST concept offers superior scalability performance at the 28 nm technology node compared to the conventional in-plane spin torque MRAM (I-ST-MRAM). The critical programming currents (- 30 μA) are low, allowing a cell layout as small as 6 F2. In addition, data retention is significantly better for P-ST enabling a non-volatile, high density product for the 28 nm node. Estimations on write performance promise high write endurance and high write speed. Circuit simulations with improved read circuit demonstrate array read access time ∼30 ns at sensing currents ∼10 μA.

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DO - 10.1109/IEDM.2007.4418898

M3 - Conference article

AN - SCOPUS:42149131790

SN - 0163-1918

SP - 187

EP - 190

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

M1 - 4418898

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

A perpendicular spin torque switching based MRAM for the 28 nm technology node

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