@inproceedings{ee1f7a2f01e94b10b52b941774c77cfb,
title = "A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET",
abstract = "SiC MOSFET has faster switching speed, lower RDs(on), and higher breakdown voltage when compared with Si MOSFET. Therefore., SiC MOSFET can work at work at higher frequencies., even Mhz. However., the overvoltage and overcurrent (OVOC) of SiC MOSFET become more serious with the increase of frequency due to the low damping and the parasitic parameters in the actual circuit. The causes of overcurrent and overvoltage of SiC MOSFET are analyzed in this paper., and a gate driver with the variable gate resistance and the variable driving voltage and is proposed to suppress OVOC of SiC MOSFET. This paper analyzes the working mode of the proposed gate driver (PGD). The PGD can effectively suppress the OVOC of SiC MOSFET. Finally., the effectiveness of the PGD is verified based on a double-pulse test platform.",
keywords = "Gate driver, Overcurrent, Overvoltage, SiC MOSFET, Switching loss",
author = "Jiangui Chen and Yan Li and Mei Liang and R. Kennel and Jiayu Liu and Haobo Guo",
note = "Publisher Copyright: {\textcopyright} 2019 The Korean Institute of Power Electronics (KIPE).; 10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia ; Conference date: 27-05-2019 Through 30-05-2019",
year = "2019",
month = may,
language = "English",
series = "ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "147--153",
booktitle = "ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia",
}