A modular high temperature measurement set-up for semiconductor device characterization

Peter Borthen, Gerhard Wachutka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room temperature up to 500°C and higher. A detailed description of the experimental equipment is given. Its practical use is demonstrated by measuring temperature-dependent characteristics of silicon VDMOSFET and IGBT devices as well as SiC-diodes. For the silicon devices, numerical simulations based on recently developed high temperature physical models were also performed in order to gain a deeper understanding of the measured data, together with a revalidation of the model parameters.

Original languageEnglish
Title of host publicationCollection of Papers Presented at The 13th International Workshop on THERMal INvestigation of Ics and Systems, THERMINIC 2007
Pages189-194
Number of pages6
DOIs
StatePublished - 2007
Event13th International Workshop on THERMal INvestigation of ICs and Systems, THERMINIC 2007 - Budapest, Hungary
Duration: 17 Sep 200719 Sep 2007

Publication series

NameCollection of Papers Presented at The 13th International Workshop on THERMal INvestigation of ICs and Systems, THERMINIC

Conference

Conference13th International Workshop on THERMal INvestigation of ICs and Systems, THERMINIC 2007
Country/TerritoryHungary
CityBudapest
Period17/09/0719/09/07

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