A low-voltage MOSFET-only σ Δ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation

T. Tille; J. Sauerbrey; D. Schmitt-Landsiedel

doi:10.1109/ISCAS.2001.921871

A low-voltage MOSFET-only σ Δ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation

T. Tille, J. Sauerbrey, D. Schmitt-Landsiedel

Medicine and Health

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

An area-efficient high-linearity MOSFET-only σ Δ modulator using depletion-mode MOS-capacitors in combined series and parallel compensation technique is presented. The new approach joins the advantages of the series and parallel compensation of depletion-mode MOS-capacitors, achieving an optimum of linearity and area efficiency. The 2nd-order fully-differential MOSFET-Only σ Δ modulator was implemented in a standard 0.25 μm n-well digital CMOS process without extra layers for capacitors. The circuit operates at 1.8 V supply voltage, consumes 1 mW and achieves a SNR of 77 dB and a SNDR of 71 dB at a signal bandwidth of 8 kHz. The occupied core area is 0.06 mm ².

Original language	English
Title of host publication	ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings
Pages	376-379
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2001.921871
State	Published - 2001
Event	2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001 - Sydney, NSW, Australia Duration: 6 May 2001 → 9 May 2001

Publication series

Name	ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings
Volume	1

Conference

Conference	2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001
Country/Territory	Australia
City	Sydney, NSW
Period	6/05/01 → 9/05/01

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10.1109/ISCAS.2001.921871

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Tille, T., Sauerbrey, J., & Schmitt-Landsiedel, D. (2001). A low-voltage MOSFET-only σ Δ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation. In ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings (pp. 376-379). Article 921871 (ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings; Vol. 1). https://doi.org/10.1109/ISCAS.2001.921871

Tille, T. ; Sauerbrey, J. ; Schmitt-Landsiedel, D. / A low-voltage MOSFET-only σ Δ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation. ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings. 2001. pp. 376-379 (ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings).

@inproceedings{724d7f43cbf24b07b31a9d16f123c48c,

title = "A low-voltage MOSFET-only σ Δ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation",

abstract = "An area-efficient high-linearity MOSFET-only σ Δ modulator using depletion-mode MOS-capacitors in combined series and parallel compensation technique is presented. The new approach joins the advantages of the series and parallel compensation of depletion-mode MOS-capacitors, achieving an optimum of linearity and area efficiency. The 2nd-order fully-differential MOSFET-Only σ Δ modulator was implemented in a standard 0.25 μm n-well digital CMOS process without extra layers for capacitors. The circuit operates at 1.8 V supply voltage, consumes 1 mW and achieves a SNR of 77 dB and a SNDR of 71 dB at a signal bandwidth of 8 kHz. The occupied core area is 0.06 mm 2.",

author = "T. Tille and J. Sauerbrey and D. Schmitt-Landsiedel",

year = "2001",

doi = "10.1109/ISCAS.2001.921871",

language = "English",

isbn = "0780366859",

series = "ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings",

pages = "376--379",

booktitle = "ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings",

note = "2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001 ; Conference date: 06-05-2001 Through 09-05-2001",

}

Tille, T, Sauerbrey, J & Schmitt-Landsiedel, D 2001, A low-voltage MOSFET-only σ Δ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation. in ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings., 921871, ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings, vol. 1, pp. 376-379, 2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001, Sydney, NSW, Australia, 6/05/01. https://doi.org/10.1109/ISCAS.2001.921871

A low-voltage MOSFET-only σ Δ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation. / Tille, T.; Sauerbrey, J.; Schmitt-Landsiedel, D.
ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings. 2001. p. 376-379 921871 (ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A low-voltage MOSFET-only σ Δ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation

AU - Tille, T.

AU - Sauerbrey, J.

AU - Schmitt-Landsiedel, D.

PY - 2001

Y1 - 2001

N2 - An area-efficient high-linearity MOSFET-only σ Δ modulator using depletion-mode MOS-capacitors in combined series and parallel compensation technique is presented. The new approach joins the advantages of the series and parallel compensation of depletion-mode MOS-capacitors, achieving an optimum of linearity and area efficiency. The 2nd-order fully-differential MOSFET-Only σ Δ modulator was implemented in a standard 0.25 μm n-well digital CMOS process without extra layers for capacitors. The circuit operates at 1.8 V supply voltage, consumes 1 mW and achieves a SNR of 77 dB and a SNDR of 71 dB at a signal bandwidth of 8 kHz. The occupied core area is 0.06 mm 2.

AB - An area-efficient high-linearity MOSFET-only σ Δ modulator using depletion-mode MOS-capacitors in combined series and parallel compensation technique is presented. The new approach joins the advantages of the series and parallel compensation of depletion-mode MOS-capacitors, achieving an optimum of linearity and area efficiency. The 2nd-order fully-differential MOSFET-Only σ Δ modulator was implemented in a standard 0.25 μm n-well digital CMOS process without extra layers for capacitors. The circuit operates at 1.8 V supply voltage, consumes 1 mW and achieves a SNR of 77 dB and a SNDR of 71 dB at a signal bandwidth of 8 kHz. The occupied core area is 0.06 mm 2.

UR - http://www.scopus.com/inward/record.url?scp=0035023758&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2001.921871

DO - 10.1109/ISCAS.2001.921871

M3 - Conference contribution

AN - SCOPUS:0035023758

SN - 0780366859

SN - 9780780366855

T3 - ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings

SP - 376

EP - 379

BT - ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings

T2 - 2001 IEEE International Symposium on Circuits and Systems, ISCAS 2001

Y2 - 6 May 2001 through 9 May 2001

ER -

Tille T, Sauerbrey J, Schmitt-Landsiedel D. A low-voltage MOSFET-only σ Δ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation. In ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings. 2001. p. 376-379. 921871. (ISCAS 2001 - 2001 IEEE International Symposium on Circuits and Systems, Conference Proceedings). doi: 10.1109/ISCAS.2001.921871

A low-voltage MOSFET-only σ Δ modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation

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