A low-power wideband D-band LNA in a 130 nm BiCMOS technology for imaging applications

E. Aguilar, A. Hagelauer, D. Kissinger, R. Weigel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

A Low-power D-Band Low Noise Amplifier (LNA) manufactured in a recent 130 nm SiGe BiCMOS process for imaging applications is presented. The architecture consists of an optimized 3-stage cascode amplifier which achieves a maximum gain of 32.8 dB and a gain >20 dB in the frequency range from 121 to 161 GHz with a DC power consumption of 39.6 mW. The simulated noise figure varies from 6 to 9.7 dB within the range 130 to 140 GHz. To the best of the author's knowledge, the presented work exhibits the highest gain-bandwidth product with the lowest power consumption for a D-Band amplifier in a 130 nm SiGe technology.

Original languageEnglish
Title of host publicationSIRF 2018 - 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages27-29
Number of pages3
ISBN (Electronic)9781538612972
DOIs
StatePublished - 27 Feb 2018
Externally publishedYes
Event18th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SIRF 2018 - Anaheim, United States
Duration: 14 Jan 201817 Jan 2018

Publication series

NameSIRF 2018 - 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Volume2018-January

Conference

Conference18th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SIRF 2018
Country/TerritoryUnited States
CityAnaheim
Period14/01/1817/01/18

Keywords

  • Imaging
  • low noise amplifier
  • mm-wave
  • radiometry

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