A fully integrated 70 GHz SiGe low phase noise push-push oscillator

Robert Wanner; Herbert Schäfer; Rudolf Lachner; Gerhard R. Olbrich; Peter Russer

doi:10.1109/MWSYM.2005.1516985

A fully integrated 70 GHz SiGe low phase noise push-push oscillator

Robert Wanner, Herbert Schäfer, Rudolf Lachner, Gerhard R. Olbrich, Peter Russer

Technical University of Munich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

21 Scopus citations

Abstract

This paper describes a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f_T = 200 GHz and a maximum frequency of oscillation f_max = 275 GHz. For the passive circuitry transmission-line components, integrated spiral inductors and MIM-capacitors are used. The oscillator output frequency can be tuned from 63 GHz to 72 GHz. In this frequency range the output power varies between -1.8 dBm and +1.6dBm while the measured single sideband phase noise is less than -103dBc/Hz at 1MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an integrated oscillator in this frequency band.

Original language	English
Title of host publication	2005 IEEE MTT-S International Microwave Symposium Digest
Pages	1523-1526
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2005.1516985
State	Published - 2005
Event	2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States Duration: 12 Jun 2005 → 17 Jun 2005

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2005
ISSN (Print)	0149-645X

Conference

Conference	2005 IEEE MTT-S International Microwave Symposium
Country/Territory	United States
City	Long Beach, CA
Period	12/06/05 → 17/06/05

Access to Document

10.1109/MWSYM.2005.1516985

Cite this

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title = "A fully integrated 70 GHz SiGe low phase noise push-push oscillator",

abstract = "This paper describes a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. For the passive circuitry transmission-line components, integrated spiral inductors and MIM-capacitors are used. The oscillator output frequency can be tuned from 63 GHz to 72 GHz. In this frequency range the output power varies between -1.8 dBm and +1.6dBm while the measured single sideband phase noise is less than -103dBc/Hz at 1MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an integrated oscillator in this frequency band.",

author = "Robert Wanner and Herbert Sch{\"a}fer and Rudolf Lachner and Olbrich, {Gerhard R.} and Peter Russer",

year = "2005",

doi = "10.1109/MWSYM.2005.1516985",

language = "English",

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series = "IEEE MTT-S International Microwave Symposium Digest",

pages = "1523--1526",

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note = "2005 IEEE MTT-S International Microwave Symposium ; Conference date: 12-06-2005 Through 17-06-2005",

}

Wanner, R, Schäfer, H, Lachner, R, Olbrich, GR & Russer, P 2005, A fully integrated 70 GHz SiGe low phase noise push-push oscillator. in 2005 IEEE MTT-S International Microwave Symposium Digest., 1516985, IEEE MTT-S International Microwave Symposium Digest, vol. 2005, pp. 1523-1526, 2005 IEEE MTT-S International Microwave Symposium, Long Beach, CA, United States, 12/06/05. https://doi.org/10.1109/MWSYM.2005.1516985

A fully integrated 70 GHz SiGe low phase noise push-push oscillator. / Wanner, Robert; Schäfer, Herbert; Lachner, Rudolf et al.
2005 IEEE MTT-S International Microwave Symposium Digest. 2005. p. 1523-1526 1516985 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This paper describes a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. For the passive circuitry transmission-line components, integrated spiral inductors and MIM-capacitors are used. The oscillator output frequency can be tuned from 63 GHz to 72 GHz. In this frequency range the output power varies between -1.8 dBm and +1.6dBm while the measured single sideband phase noise is less than -103dBc/Hz at 1MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an integrated oscillator in this frequency band.

AB - This paper describes a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. For the passive circuitry transmission-line components, integrated spiral inductors and MIM-capacitors are used. The oscillator output frequency can be tuned from 63 GHz to 72 GHz. In this frequency range the output power varies between -1.8 dBm and +1.6dBm while the measured single sideband phase noise is less than -103dBc/Hz at 1MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an integrated oscillator in this frequency band.

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A fully integrated 70 GHz SiGe low phase noise push-push oscillator

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