TY - JOUR
T1 - A drift-diffusion simulation model for organic field effect transistors
T2 - On the importance of the Gaussian density of states and traps
AU - Darwish, Mohammed
AU - Gagliardi, Alessio
N1 - Publisher Copyright:
© 2019 IOP Publishing Ltd.
PY - 2020
Y1 - 2020
N2 - The nature of charge transport in organic materials depends on several important aspects, such as the description of the density of states, and the charge mobility model. Therefore specific models describing electronic properties of organic semiconductors must be considered. We have used an organic based drift-diffusion model for the electrical characterization of organic field effect transistors (OFETs) utilizing either small molecules or polymers. Furthermore, the effect of interface traps, bulk traps, and fixed charges on transistor characteristics are included and investigated. Finally, simulation results are compared to experimental measurements, and conclusions are drawn out in terms of transistor performance parameters including threshold voltages, and field-dependent mobilities.
AB - The nature of charge transport in organic materials depends on several important aspects, such as the description of the density of states, and the charge mobility model. Therefore specific models describing electronic properties of organic semiconductors must be considered. We have used an organic based drift-diffusion model for the electrical characterization of organic field effect transistors (OFETs) utilizing either small molecules or polymers. Furthermore, the effect of interface traps, bulk traps, and fixed charges on transistor characteristics are included and investigated. Finally, simulation results are compared to experimental measurements, and conclusions are drawn out in terms of transistor performance parameters including threshold voltages, and field-dependent mobilities.
KW - Drift diffusion
KW - Mobility
KW - OFET
KW - Traps
UR - http://www.scopus.com/inward/record.url?scp=85079518848&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/ab605d
DO - 10.1088/1361-6463/ab605d
M3 - Article
AN - SCOPUS:85079518848
SN - 0022-3727
VL - 53
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 10
M1 - 105102
ER -