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A D-band 23.5dB High Gain 0.8V Low-Power Transformer Matched LNA in 22nm FDSOI CMOS

  • Technical University of Munich
  • Fraunhofer Institute for Electronic Microsystems and Solid State Technologies (EMFT)

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work presents a D-band fully differential four-stage common-source low noise amplifier (LNA). The design operates in 110 GHz-140 GHz frequency region, with a 22.4 GHz 3-dB bandwidth, achieving a peak gain of 23.5 dB at 115 GHz with a DC power consumption of 52 mW. It has a noise figure of 7.5dB at 140 GHz and 8.2 dB at 120 GHz. To allow broadband simultaneous matching and biasing, transformer-based interstage matching has been utilized. The design also utilizes back-gate biasing to further increase the linearity and gain of the amplifier.

Original languageEnglish
Title of host publication2025 16th German Microwave Conference, GeMiC 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages605-607
Number of pages3
ISBN (Electronic)9783982039749
DOIs
StatePublished - 2025
Event16th German Microwave Conference, GeMiC 2025 - Dresden, Germany
Duration: 17 Mar 202519 Mar 2025

Publication series

Name2025 16th German Microwave Conference, GeMiC 2025

Conference

Conference16th German Microwave Conference, GeMiC 2025
Country/TerritoryGermany
CityDresden
Period17/03/2519/03/25

Keywords

  • 6G
  • CMOS
  • D-band
  • FDSOI
  • LNA
  • mmW

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