A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide

M. Stutzmann; J. B. Chevrier; C. P. Herrero; A. Breitschwerdt

doi:10.1007/BF00323434

A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide

M. Stutzmann, J. B. Chevrier, C. P. Herrero, A. Breitschwerdt

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The incorporation of deuterium into crystalline silicon, germanium, and gallium arsenide from a plasma source is investigated as a function of sample temperature during the plasma treatment. The total amount of incorporated deuterium and its bonding states are characterized by the thermal effusion (TE) technique for different dopants and doping levels. In all samples investigated, we find a strong influence of the passivation temperature on these quantities; however, there are large differences between different semiconductors and for different doping levels or dopants. The results are discussed in terms of plasma-induced defects, dopant-deuterium complexes, and surface effects.

Original language	English
Pages (from-to)	47-53
Number of pages	7
Journal	Applied Physics A Solids and Surfaces
Volume	53
Issue number	1
DOIs	https://doi.org/10.1007/BF00323434
State	Published - Jul 1991
Externally published	Yes

Keywords

61.70.At
66.30.Jt

Access to Document

10.1007/BF00323434

Cite this

@article{7c6516a4ef0c4e048f8b587a4bc58021,

title = "A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide",

abstract = "The incorporation of deuterium into crystalline silicon, germanium, and gallium arsenide from a plasma source is investigated as a function of sample temperature during the plasma treatment. The total amount of incorporated deuterium and its bonding states are characterized by the thermal effusion (TE) technique for different dopants and doping levels. In all samples investigated, we find a strong influence of the passivation temperature on these quantities; however, there are large differences between different semiconductors and for different doping levels or dopants. The results are discussed in terms of plasma-induced defects, dopant-deuterium complexes, and surface effects.",

keywords = "61.70.At, 66.30.Jt",

author = "M. Stutzmann and Chevrier, {J. B.} and Herrero, {C. P.} and A. Breitschwerdt",

year = "1991",

month = jul,

doi = "10.1007/BF00323434",

language = "English",

volume = "53",

pages = "47--53",

journal = "Applied Physics A Solids and Surfaces",

issn = "0721-7250",

publisher = "Springer Verlag",

number = "1",

}

TY - JOUR

T1 - A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide

AU - Stutzmann, M.

AU - Chevrier, J. B.

AU - Herrero, C. P.

AU - Breitschwerdt, A.

PY - 1991/7

Y1 - 1991/7

N2 - The incorporation of deuterium into crystalline silicon, germanium, and gallium arsenide from a plasma source is investigated as a function of sample temperature during the plasma treatment. The total amount of incorporated deuterium and its bonding states are characterized by the thermal effusion (TE) technique for different dopants and doping levels. In all samples investigated, we find a strong influence of the passivation temperature on these quantities; however, there are large differences between different semiconductors and for different doping levels or dopants. The results are discussed in terms of plasma-induced defects, dopant-deuterium complexes, and surface effects.

AB - The incorporation of deuterium into crystalline silicon, germanium, and gallium arsenide from a plasma source is investigated as a function of sample temperature during the plasma treatment. The total amount of incorporated deuterium and its bonding states are characterized by the thermal effusion (TE) technique for different dopants and doping levels. In all samples investigated, we find a strong influence of the passivation temperature on these quantities; however, there are large differences between different semiconductors and for different doping levels or dopants. The results are discussed in terms of plasma-induced defects, dopant-deuterium complexes, and surface effects.

KW - 61.70.At

KW - 66.30.Jt

UR - http://www.scopus.com/inward/record.url?scp=0026191271&partnerID=8YFLogxK

U2 - 10.1007/BF00323434

DO - 10.1007/BF00323434

M3 - Article

AN - SCOPUS:0026191271

SN - 0721-7250

VL - 53

SP - 47

EP - 53

JO - Applied Physics A Solids and Surfaces

JF - Applied Physics A Solids and Surfaces

IS - 1

ER -

A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this