A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS™ body diode

M. Schmitt, H. J. Schulze, A. Schlögl, M. Vossebürger, A. Willmeroth, G. Deboy, G. Wachutka

Research output: Contribution to conferencePaperpeer-review

39 Scopus citations

Abstract

With a view to improving the switching speed of the internal diode, we exposed CoolMOS™ power MOSFETs as prominent representatives of the new class of charge compensation devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the electrical device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Qrr can be reduced by a factor of 10 compared to reference devices without any significant change of the remaining electrical data of the device.

Original languageEnglish
Pages229-232
Number of pages4
StatePublished - 2002
Externally publishedYes
Event14th International Symposium on Power Semiconductor Devices and IC's 2002 - Santa Fe, NM, United States
Duration: 4 Jun 20027 Jun 2002

Conference

Conference14th International Symposium on Power Semiconductor Devices and IC's 2002
Country/TerritoryUnited States
CitySanta Fe, NM
Period4/06/027/06/02

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