A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS™ body diode

M. Schmitt; H. J. Schulze; A. Schlögl; M. Vossebürger; A. Willmeroth; G. Deboy; G. Wachutka

A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS™ body diode

M. Schmitt, H. J. Schulze, A. Schlögl, M. Vossebürger, A. Willmeroth, G. Deboy, G. Wachutka

Infineon Technologies AG

Research output: Contribution to conference › Paper › peer-review

42 Scopus citations

Abstract

With a view to improving the switching speed of the internal diode, we exposed CoolMOS™ power MOSFETs as prominent representatives of the new class of charge compensation devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the electrical device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q_rr can be reduced by a factor of 10 compared to reference devices without any significant change of the remaining electrical data of the device.

Original language	English
Pages	229-232
Number of pages	4
State	Published - 2002
Externally published	Yes
Event	14th International Symposium on Power Semiconductor Devices and IC's 2002 - Santa Fe, NM, United States Duration: 4 Jun 2002 → 7 Jun 2002

Conference

Conference	14th International Symposium on Power Semiconductor Devices and IC's 2002
Country/Territory	United States
City	Santa Fe, NM
Period	4/06/02 → 7/06/02

Cite this

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title = "A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS{\texttrademark} body diode",

abstract = "With a view to improving the switching speed of the internal diode, we exposed CoolMOS{\texttrademark} power MOSFETs as prominent representatives of the new class of charge compensation devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the electrical device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Qrr can be reduced by a factor of 10 compared to reference devices without any significant change of the remaining electrical data of the device.",

author = "M. Schmitt and Schulze, {H. J.} and A. Schl{\"o}gl and M. Vosseb{\"u}rger and A. Willmeroth and G. Deboy and G. Wachutka",

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T1 - A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS™ body diode

AU - Schmitt, M.

AU - Schulze, H. J.

AU - Schlögl, A.

AU - Vossebürger, M.

AU - Willmeroth, A.

AU - Deboy, G.

AU - Wachutka, G.

PY - 2002

Y1 - 2002

N2 - With a view to improving the switching speed of the internal diode, we exposed CoolMOS™ power MOSFETs as prominent representatives of the new class of charge compensation devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the electrical device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Qrr can be reduced by a factor of 10 compared to reference devices without any significant change of the remaining electrical data of the device.

AB - With a view to improving the switching speed of the internal diode, we exposed CoolMOS™ power MOSFETs as prominent representatives of the new class of charge compensation devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the electrical device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Qrr can be reduced by a factor of 10 compared to reference devices without any significant change of the remaining electrical data of the device.

UR - http://www.scopus.com/inward/record.url?scp=0036051449&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036051449

SP - 229

EP - 232

T2 - 14th International Symposium on Power Semiconductor Devices and IC's 2002

Y2 - 4 June 2002 through 7 June 2002

ER -

A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS™ body diode

Abstract

Conference

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