A comment on thermal defect creation in hydrogenated amorphous silicon

Martin Stutzmann

doi:10.1080/09500839208229277

A comment on thermal defect creation in hydrogenated amorphous silicon

Martin Stutzmann

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The theoretical modelling of the temperature-dependent metastable dangling- bond density in undoped hydrogenated amorphous silicon (a-Si: H) is critically reviewed. It is shown that thermal broadening of the band tails provides the main contribution to the observed increase in the deep-defect density in a-Si: H with increasing temperature. The possible structural origins of this phenomenon are briefly discussed.

Original language	English
Pages (from-to)	147-150
Number of pages	4
Journal	Philosophical Magazine Letters
Volume	66
Issue number	3
DOIs	https://doi.org/10.1080/09500839208229277
State	Published - 1992
Externally published	Yes

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10.1080/09500839208229277

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title = "A comment on thermal defect creation in hydrogenated amorphous silicon",

abstract = "The theoretical modelling of the temperature-dependent metastable dangling- bond density in undoped hydrogenated amorphous silicon (a-Si: H) is critically reviewed. It is shown that thermal broadening of the band tails provides the main contribution to the observed increase in the deep-defect density in a-Si: H with increasing temperature. The possible structural origins of this phenomenon are briefly discussed.",

author = "Martin Stutzmann",

year = "1992",

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PY - 1992

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N2 - The theoretical modelling of the temperature-dependent metastable dangling- bond density in undoped hydrogenated amorphous silicon (a-Si: H) is critically reviewed. It is shown that thermal broadening of the band tails provides the main contribution to the observed increase in the deep-defect density in a-Si: H with increasing temperature. The possible structural origins of this phenomenon are briefly discussed.

AB - The theoretical modelling of the temperature-dependent metastable dangling- bond density in undoped hydrogenated amorphous silicon (a-Si: H) is critically reviewed. It is shown that thermal broadening of the band tails provides the main contribution to the observed increase in the deep-defect density in a-Si: H with increasing temperature. The possible structural origins of this phenomenon are briefly discussed.

UR - https://www.scopus.com/pages/publications/2842538052

U2 - 10.1080/09500839208229277

DO - 10.1080/09500839208229277

M3 - Article

AN - SCOPUS:2842538052

SN - 0950-0839

VL - 66

SP - 147

EP - 150

JO - Philosophical Magazine Letters

JF - Philosophical Magazine Letters

IS - 3

ER -

A comment on thermal defect creation in hydrogenated amorphous silicon

Abstract

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