Abstract
The theoretical modelling of the temperature-dependent metastable dangling- bond density in undoped hydrogenated amorphous silicon (a-Si: H) is critically reviewed. It is shown that thermal broadening of the band tails provides the main contribution to the observed increase in the deep-defect density in a-Si: H with increasing temperature. The possible structural origins of this phenomenon are briefly discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 147-150 |
| Number of pages | 4 |
| Journal | Philosophical Magazine Letters |
| Volume | 66 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1992 |
| Externally published | Yes |