Abstract
We describe the setup, characteristics, and application of an in vacuo ion-sputtering and electron-beam annealing device for the postpreparation of scanning probes (e.g., scanning tunneling microscopy (STM) tips) under ultrahigh vacuum (UHV) conditions. The proposed device facilitates the straightforward implementation of a common two-step cleaning procedure, where the first step consists of ion-sputtering, while the second step heals out sputtering-induced defects by thermal annealing. In contrast to the standard way, no dedicated external ion-sputtering gun is required with the proposed device. The performance of the described device is demonstrated by SEM micrographs and energy dispersive x-ray characterization of electrochemically etched tungsten tips prior and after postprocessing.
Original language | English |
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Article number | 033701 |
Journal | Review of Scientific Instruments |
Volume | 82 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2011 |