A CMOS Temperature Stabilized 2-D Mechanical Stress Sensor with 11-bit Resolution

Umidjon Nurmetov; Tobias Fritz; Ernst Mullner; Christopher M. Dougherty; Michael Szelong; Franz Kreupl; Ralf Brederlow

doi:10.1109/JSSC.2020.2967554

A CMOS Temperature Stabilized 2-D Mechanical Stress Sensor with 11-bit Resolution

Umidjon Nurmetov, Tobias Fritz, Ernst Mullner, Christopher M. Dougherty, Michael Szelong, Franz Kreupl, Ralf Brederlow

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Using an unmodified 130-nm CMOS process, we present the design of an integrated 2-D CMOS stress sensor and trim methodology resulting in 11-bit resolution and 66-dB dynamic range. The n-well-only primary sensing elements and p-Type auxiliary elements allow post-calibrated measurement of both stress magnitude and angle over the commercial temperature range from 5 °C to 90 °C. The implementation is robust to process variation, requires 357 \mu \text{W} when active, and is optimized for duty cycling to reduce system energy consumption.

Original language	English
Article number	8984225
Pages (from-to)	846-855
Number of pages	10
Journal	IEEE Journal of Solid-State Circuits
Volume	55
Issue number	4
DOIs	https://doi.org/10.1109/JSSC.2020.2967554
State	Published - Apr 2020

Keywords

2-D stress sensor
CMOS stress sensor
mechanical stress
mechanical stress sensor
n-well sensing element
on-chip stress sensor

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10.1109/JSSC.2020.2967554

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title = "A CMOS Temperature Stabilized 2-D Mechanical Stress Sensor with 11-bit Resolution",

abstract = "Using an unmodified 130-nm CMOS process, we present the design of an integrated 2-D CMOS stress sensor and trim methodology resulting in 11-bit resolution and 66-dB dynamic range. The n-well-only primary sensing elements and p-Type auxiliary elements allow post-calibrated measurement of both stress magnitude and angle over the commercial temperature range from 5 °C to 90 °C. The implementation is robust to process variation, requires 357 \mu \text{W} when active, and is optimized for duty cycling to reduce system energy consumption.",

keywords = "2-D stress sensor, CMOS stress sensor, mechanical stress, mechanical stress sensor, n-well sensing element, on-chip stress sensor",

author = "Umidjon Nurmetov and Tobias Fritz and Ernst Mullner and Dougherty, {Christopher M.} and Michael Szelong and Franz Kreupl and Ralf Brederlow",

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AU - Fritz, Tobias

AU - Mullner, Ernst

AU - Dougherty, Christopher M.

AU - Szelong, Michael

AU - Kreupl, Franz

AU - Brederlow, Ralf

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AB - Using an unmodified 130-nm CMOS process, we present the design of an integrated 2-D CMOS stress sensor and trim methodology resulting in 11-bit resolution and 66-dB dynamic range. The n-well-only primary sensing elements and p-Type auxiliary elements allow post-calibrated measurement of both stress magnitude and angle over the commercial temperature range from 5 °C to 90 °C. The implementation is robust to process variation, requires 357 \mu \text{W} when active, and is optimized for duty cycling to reduce system energy consumption.

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KW - CMOS stress sensor

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KW - n-well sensing element

KW - on-chip stress sensor

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A CMOS Temperature Stabilized 2-D Mechanical Stress Sensor with 11-bit Resolution

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