A carrier relaxation bottleneck probed in single InGaAs quantum dots using integrated superconducting single photon detectors

Keyphrases

• Two Dimensional 100%
• Wetting Layer 100%
• InGaAs Quantum Dots 100%
• Carrier Relaxation 100%
• Superconducting Single-photon Detector 100%
• Bulk Material 50%
• On chip 50%
• Temporal Dynamics 50%
• Capture Dynamics 50%
• Ridge Waveguide 50%
• Gallium Arsenide 50%
• Rise Time 50%
• Quantum Dots 50%
• Charge Carriers 50%
• Time-resolved Photoluminescence 50%
• Exciton 50%
• Relaxation Dynamics 50%
• Excitation Levels 50%
• Time-resolved Spectroscopy 50%
• Luminescence Measurements 50%
• Single Excitation 50%
• On-chip Measurement 50%
• Injected Carriers 50%
• Ultra-slow 50%
• Excitonic Transition 50%
• Multiphonon Relaxation 50%
• Carrier Relaxation Time 50%
• Chip Detection 50%
• AuGe 50%
• Power Law Dependence 50%

Material Science

• Quantum Dot 100%
• Indium Gallium Arsenide 100%
• Waveguide 33%
• Charge Carrier 33%
• Gallium Arsenide 33%
• Luminescence 33%
• Time-Resolved Spectroscopy 33%

Physics

• Quantum Dot 100%
• Exciton 66%
• Relaxation Time 33%
• Waveguide 33%
• Phonon 33%