TY - GEN
T1 - A 65nm test structure for the analysis of NBTI induced statistical variation in SRAM transistors
AU - Fischer, Thomas
AU - Amirante, Ettore
AU - Hofmann, Karl
AU - Ostermayr, Martin
AU - Huber, Peter
AU - Schmitt-Landsiedel, Doris
PY - 2008
Y1 - 2008
N2 - We present the results of a test structure that allows to measure the variation of SRAM p-MOS and n-MOS transistors in a dense environment and to apply Negative Bias Temperature Instability (NBTI) stress on the p-MOS transistors. The threshold voltage (Vth) and drain current (I d) distributions of p-MOS SRAM transistors pre and post NBTI Stress are measured and analyzed. The probability density functions (PDF) of both transistor parameters Vth and Id follow a Gaussian distribution pre and post NBTI stress, but the difference in the transistor parameters of an individual device is not Gaussian distributed. The standard deviation in the difference of Vth is about 50% of the mean for the small SRAM p-MOS transistor. The impact of the additional variation induced by NBTI stress is shown for the Static Noise Margin of a 6-T SRAM cell.
AB - We present the results of a test structure that allows to measure the variation of SRAM p-MOS and n-MOS transistors in a dense environment and to apply Negative Bias Temperature Instability (NBTI) stress on the p-MOS transistors. The threshold voltage (Vth) and drain current (I d) distributions of p-MOS SRAM transistors pre and post NBTI Stress are measured and analyzed. The probability density functions (PDF) of both transistor parameters Vth and Id follow a Gaussian distribution pre and post NBTI stress, but the difference in the transistor parameters of an individual device is not Gaussian distributed. The standard deviation in the difference of Vth is about 50% of the mean for the small SRAM p-MOS transistor. The impact of the additional variation induced by NBTI stress is shown for the Static Noise Margin of a 6-T SRAM cell.
UR - http://www.scopus.com/inward/record.url?scp=58049090504&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2008.4681696
DO - 10.1109/ESSDERC.2008.4681696
M3 - Conference contribution
AN - SCOPUS:58049090504
SN - 9781424423644
T3 - ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
SP - 51
EP - 54
BT - ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
PB - IEEE Computer Society
T2 - ESSDERC 2008 - 38th European Solid-State Device Research Conference
Y2 - 15 September 2008 through 19 September 2008
ER -