A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s

M. Jefremow; T. Kern; U. Backhausen; J. Elbs; B. Rousseau; C. Roll; L. Castro; T. Roehr; E. Paparisto; K. Herfurth; R. Bartenschlager; S. Thierold; R. Renardy; S. Kassenetter; N. Lawal; M. Strasser; W. Trottmann; D. Schmitt-Landsiedel

doi:10.1109/ESSCIRC.2013.6649105

A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s

M. Jefremow, T. Kern, U. Backhausen, J. Elbs, B. Rousseau, C. Roll, L. Castro, T. Roehr, E. Paparisto, K. Herfurth, R. Bartenschlager, S. Thierold, R. Renardy, S. Kassenetter, N. Lawal, M. Strasser, W. Trottmann, D. Schmitt-Landsiedel

Medicine and Health

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.

Original language	English
Title of host publication	ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference
Pages	193-196
Number of pages	4
DOIs	https://doi.org/10.1109/ESSCIRC.2013.6649105
State	Published - 2013
Event	39th European Solid-State Circuits Conference, ESSCIRC 2013 - Bucharest, Romania Duration: 16 Sep 2013 → 20 Sep 2013

Publication series

Name	European Solid-State Circuits Conference
ISSN (Print)	1930-8833

Conference

Conference	39th European Solid-State Circuits Conference, ESSCIRC 2013
Country/Territory	Romania
City	Bucharest
Period	16/09/13 → 20/09/13

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10.1109/ESSCIRC.2013.6649105

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Jefremow, M., Kern, T., Backhausen, U., Elbs, J., Rousseau, B., Roll, C., Castro, L., Roehr, T., Paparisto, E., Herfurth, K., Bartenschlager, R., Thierold, S., Renardy, R., Kassenetter, S., Lawal, N., Strasser, M., Trottmann, W., & Schmitt-Landsiedel, D. (2013). A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s. In ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference (pp. 193-196). Article 6649105 (European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2013.6649105

@inproceedings{8862883c2cb1498dad2e2fb0e7b9ebf6,

title = "A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s",

abstract = "This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.",

author = "M. Jefremow and T. Kern and U. Backhausen and J. Elbs and B. Rousseau and C. Roll and L. Castro and T. Roehr and E. Paparisto and K. Herfurth and R. Bartenschlager and S. Thierold and R. Renardy and S. Kassenetter and N. Lawal and M. Strasser and W. Trottmann and D. Schmitt-Landsiedel",

year = "2013",

doi = "10.1109/ESSCIRC.2013.6649105",

language = "English",

isbn = "9781479906437",

series = "European Solid-State Circuits Conference",

pages = "193--196",

booktitle = "ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference",

note = "39th European Solid-State Circuits Conference, ESSCIRC 2013 ; Conference date: 16-09-2013 Through 20-09-2013",

}

Jefremow, M, Kern, T, Backhausen, U, Elbs, J, Rousseau, B, Roll, C, Castro, L, Roehr, T, Paparisto, E, Herfurth, K, Bartenschlager, R, Thierold, S, Renardy, R, Kassenetter, S, Lawal, N, Strasser, M, Trottmann, W & Schmitt-Landsiedel, D 2013, A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s. in ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference., 6649105, European Solid-State Circuits Conference, pp. 193-196, 39th European Solid-State Circuits Conference, ESSCIRC 2013, Bucharest, Romania, 16/09/13. https://doi.org/10.1109/ESSCIRC.2013.6649105

A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s. / Jefremow, M.; Kern, T.; Backhausen, U. et al.
ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference. 2013. p. 193-196 6649105 (European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kern, T.

AU - Backhausen, U.

AU - Elbs, J.

AU - Rousseau, B.

AU - Roll, C.

AU - Castro, L.

AU - Roehr, T.

AU - Paparisto, E.

AU - Herfurth, K.

AU - Bartenschlager, R.

AU - Thierold, S.

AU - Renardy, R.

AU - Kassenetter, S.

AU - Lawal, N.

AU - Strasser, M.

AU - Trottmann, W.

AU - Schmitt-Landsiedel, D.

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AB - This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.

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ER -

Jefremow M, Kern T, Backhausen U, Elbs J, Rousseau B, Roll C et al. A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s. In ESSCIRC 2013 - Proceedings of the 39th European Solid-State Circuits Conference. 2013. p. 193-196. 6649105. (European Solid-State Circuits Conference). doi: 10.1109/ESSCIRC.2013.6649105

A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s

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