TY - GEN
T1 - A 60 GHz Push-Push Voltage-Controlled Oscillator with Adaptive Gate Biasing in 28 nm Bulk CMOS Technology
AU - Rimmelspacher, Johannes
AU - Weigel, Robert
AU - Hagelauer, Amelie
AU - Issakov, Vadim
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/8/17
Y1 - 2018/8/17
N2 - This paper presents a 60 GHz push-push voltage-controlled oscillator (VCO) with adaptive gate biasing realized in 28 nm bulk CMOS technology. The circuit uses a trifilar transformer - primary coil is used in the LC resonator tank, secondary coil realizes an inductive feedback of the cross-coupled pair and the third coil extracts the fundamental signal. The proposed inductive feedback technique enables an adaptive bias without use of capacitors at the gates of the cross-coupled pair transistors. The varactor banks use standard threshold voltage (VT) NMOS devices. The VCO achieves a 30 % continuous frequency tuning range (FTR) and a mean phase noise (PN) of -86 dBc/Hz at 1 MHz offset from carrier. The total DC power dissipation including output buffers is less than 80 mW at a 0.9 V power supply. The circuit area excluding pads is 0.2 mm2. A reference VCO without gate biasing is fabricated and used for comparison.
AB - This paper presents a 60 GHz push-push voltage-controlled oscillator (VCO) with adaptive gate biasing realized in 28 nm bulk CMOS technology. The circuit uses a trifilar transformer - primary coil is used in the LC resonator tank, secondary coil realizes an inductive feedback of the cross-coupled pair and the third coil extracts the fundamental signal. The proposed inductive feedback technique enables an adaptive bias without use of capacitors at the gates of the cross-coupled pair transistors. The varactor banks use standard threshold voltage (VT) NMOS devices. The VCO achieves a 30 % continuous frequency tuning range (FTR) and a mean phase noise (PN) of -86 dBc/Hz at 1 MHz offset from carrier. The total DC power dissipation including output buffers is less than 80 mW at a 0.9 V power supply. The circuit area excluding pads is 0.2 mm2. A reference VCO without gate biasing is fabricated and used for comparison.
KW - CMOS Technology
KW - millimeter-wave
UR - http://www.scopus.com/inward/record.url?scp=85053043927&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2018.8439188
DO - 10.1109/MWSYM.2018.8439188
M3 - Conference contribution
AN - SCOPUS:85053043927
SN - 9781538650677
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 1438
EP - 1440
BT - Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Y2 - 10 June 2018 through 15 June 2018
ER -