A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier

Bernhard Wicht; Jean Yves Larguier; Doris Schmitt-Landsiedel

A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier

Bernhard Wicht
, Jean Yves Larguier
, Doris Schmitt-Landsiedel

Medicine and Health

Technical University of Munich
Infineon Technologies AG

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

A fully-differential current sense amplifier operates as low as 0.7V, automatically turns off after reading and features fast precharge. An implementation of a 1.5V 4k × 32 dual-port SRAM macro in a 130nm CMOS process achieves an access time of 1.7ns.

Original language	English
Pages (from-to)	457+462-463+508
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
State	Published - 2003
Event	2003 Digest of Technical Papers - , United States Duration: 9 Feb 2003 → 13 Feb 2003

Cite this

@article{c33aed0e018d4ab29a191f4692fc3972,

title = "A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier",

abstract = "A fully-differential current sense amplifier operates as low as 0.7V, automatically turns off after reading and features fast precharge. An implementation of a 1.5V 4k × 32 dual-port SRAM macro in a 130nm CMOS process achieves an access time of 1.7ns.",

author = "Bernhard Wicht and Larguier, \{Jean Yves\} and Doris Schmitt-Landsiedel",

year = "2003",

language = "English",

pages = "457+462--463+508",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 Digest of Technical Papers ; Conference date: 09-02-2003 Through 13-02-2003",

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T1 - A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier

AU - Wicht, Bernhard

AU - Larguier, Jean Yves

AU - Schmitt-Landsiedel, Doris

PY - 2003

Y1 - 2003

N2 - A fully-differential current sense amplifier operates as low as 0.7V, automatically turns off after reading and features fast precharge. An implementation of a 1.5V 4k × 32 dual-port SRAM macro in a 130nm CMOS process achieves an access time of 1.7ns.

AB - A fully-differential current sense amplifier operates as low as 0.7V, automatically turns off after reading and features fast precharge. An implementation of a 1.5V 4k × 32 dual-port SRAM macro in a 130nm CMOS process achieves an access time of 1.7ns.

UR - https://www.scopus.com/pages/publications/0037630654

M3 - Conference article

AN - SCOPUS:0037630654

SN - 0193-6530

SP - 457+462-463+508

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

T2 - 2003 Digest of Technical Papers

Y2 - 9 February 2003 through 13 February 2003

ER -

A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier

Abstract

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