TY - GEN
T1 - A 13.56MHz class e power amplifier for inductively coupled DC supply with 95% power added efficiency (PAE)
AU - Stubenrauch, F.
AU - Seliger, N.
AU - Schustek, M.
AU - Lebedev, A.
AU - Schmitt-Landsiedel, D.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/11/19
Y1 - 2015/11/19
N2 - Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE).
AB - Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE).
UR - http://www.scopus.com/inward/record.url?scp=85009157902&partnerID=8YFLogxK
U2 - 10.1109/EURFID.2015.7332390
DO - 10.1109/EURFID.2015.7332390
M3 - Conference contribution
AN - SCOPUS:85009157902
T3 - 2015 5th International EURASIP Workshop on RFID Technology, EURFID 2015
SP - 87
EP - 93
BT - 2015 5th International EURASIP Workshop on RFID Technology, EURFID 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th International EURASIP Workshop on RFID Technology, EURFID 2015
Y2 - 22 October 2015 through 23 October 2015
ER -