A 1 Mbit SRAM test structure to analyze local mismatch beyond 5 sigma variation

Thomas Fischer, Christopher Otte, Doris Schmitt-Landsiedel, Ettore Amirante, Alexander Olbrich, Peter Huber, Martin Ostermayr, Thomas Nirschl, Jan Einfeld

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

We present an area efficient test structure that allows a measurement of the statistical distribution of SRAM cell currents beyond 5 sigma variation. The test structure was fabricated in a 90nm and a 65nm CMOS technology. The measured data show that the device variations are Gaussian-distributed for more than 1 million devices, covering more than 5 sigma of variation. Monte Carlo simulations are used to validate the measurements.

Original languageEnglish
Title of host publication2007 IEEE International Conference on Microelectronic Test Structures, ICMTS - Conference Proceedings
Pages63-66
Number of pages4
DOIs
StatePublished - 2007
Event2007 IEEE International Conference on Microelectronic Test Structures, ICMTS '07 - Bunkyo-ku, Japan
Duration: 19 Mar 200722 Mar 2007

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Conference

Conference2007 IEEE International Conference on Microelectronic Test Structures, ICMTS '07
Country/TerritoryJapan
CityBunkyo-ku
Period19/03/0722/03/07

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