A 0.7-V MOSFET-only switched-opamp ΣΔ modulator in standard digital CMOS technology

Jens Sauerbrey; Thomas Tille; Doris Schmitt-Landsiedel; Roland Thewes

doi:10.1109/JSSC.2002.804330

A 0.7-V MOSFET-only switched-opamp ΣΔ modulator in standard digital CMOS technology

Jens Sauerbrey, Thomas Tille, Doris Schmitt-Landsiedel, Roland Thewes

Medicine and Health

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

A 0.7-V MOSFET-only ΣΔ modulator for voice band applications is presented. The second-order modulator is realized using a switched-opamp technique. All capacitors are realized using compensated MOS devices operated in the depletion region. A combination of parallel and series compensated depletion-mode MOSCAPs is used to obtain high area efficiency. The circuit is fabricated in a 0.18-μm CMOS process. The only components used are standard n-MOS and p-MOS transistors with threshold voltages of approximately 400 mV. All transistors are operated within the supply voltage window of 0.7 V; voltage boosting techniques are not used. The active area is 0.082 mm². The modulator achieves 67-dB signal-to-noise-and-distortion ratio, 70-dB signal-to-noise ratio, and 75-dB dynamic range at 8-kHz signal bandwidth and consumes 80 μW of power.

Original language	English
Pages (from-to)	1662-1669
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	37
Issue number	12
DOIs	https://doi.org/10.1109/JSSC.2002.804330
State	Published - Dec 2002

Keywords

Analog-to-digital converters
CMOS analog integrated circuits
Depletion-mode MOS-capacitor
Low power
Low supply
MOSCAP
MOSFET-only
Sigma-delta modulators
Switched capacitor circuits
Switched-opamp technique

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10.1109/JSSC.2002.804330

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title = "A 0.7-V MOSFET-only switched-opamp ΣΔ modulator in standard digital CMOS technology",

abstract = "A 0.7-V MOSFET-only ΣΔ modulator for voice band applications is presented. The second-order modulator is realized using a switched-opamp technique. All capacitors are realized using compensated MOS devices operated in the depletion region. A combination of parallel and series compensated depletion-mode MOSCAPs is used to obtain high area efficiency. The circuit is fabricated in a 0.18-μm CMOS process. The only components used are standard n-MOS and p-MOS transistors with threshold voltages of approximately 400 mV. All transistors are operated within the supply voltage window of 0.7 V; voltage boosting techniques are not used. The active area is 0.082 mm2. The modulator achieves 67-dB signal-to-noise-and-distortion ratio, 70-dB signal-to-noise ratio, and 75-dB dynamic range at 8-kHz signal bandwidth and consumes 80 μW of power.",

keywords = "Analog-to-digital converters, CMOS analog integrated circuits, Depletion-mode MOS-capacitor, Low power, Low supply, MOSCAP, MOSFET-only, Sigma-delta modulators, Switched capacitor circuits, Switched-opamp technique",

author = "Jens Sauerbrey and Thomas Tille and Doris Schmitt-Landsiedel and Roland Thewes",

year = "2002",

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AU - Tille, Thomas

AU - Schmitt-Landsiedel, Doris

AU - Thewes, Roland

PY - 2002/12

Y1 - 2002/12

N2 - A 0.7-V MOSFET-only ΣΔ modulator for voice band applications is presented. The second-order modulator is realized using a switched-opamp technique. All capacitors are realized using compensated MOS devices operated in the depletion region. A combination of parallel and series compensated depletion-mode MOSCAPs is used to obtain high area efficiency. The circuit is fabricated in a 0.18-μm CMOS process. The only components used are standard n-MOS and p-MOS transistors with threshold voltages of approximately 400 mV. All transistors are operated within the supply voltage window of 0.7 V; voltage boosting techniques are not used. The active area is 0.082 mm2. The modulator achieves 67-dB signal-to-noise-and-distortion ratio, 70-dB signal-to-noise ratio, and 75-dB dynamic range at 8-kHz signal bandwidth and consumes 80 μW of power.

AB - A 0.7-V MOSFET-only ΣΔ modulator for voice band applications is presented. The second-order modulator is realized using a switched-opamp technique. All capacitors are realized using compensated MOS devices operated in the depletion region. A combination of parallel and series compensated depletion-mode MOSCAPs is used to obtain high area efficiency. The circuit is fabricated in a 0.18-μm CMOS process. The only components used are standard n-MOS and p-MOS transistors with threshold voltages of approximately 400 mV. All transistors are operated within the supply voltage window of 0.7 V; voltage boosting techniques are not used. The active area is 0.082 mm2. The modulator achieves 67-dB signal-to-noise-and-distortion ratio, 70-dB signal-to-noise ratio, and 75-dB dynamic range at 8-kHz signal bandwidth and consumes 80 μW of power.

KW - Analog-to-digital converters

KW - CMOS analog integrated circuits

KW - Depletion-mode MOS-capacitor

KW - Low power

KW - Low supply

KW - MOSCAP

KW - MOSFET-only

KW - Sigma-delta modulators

KW - Switched capacitor circuits

KW - Switched-opamp technique

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JO - IEEE Journal of Solid-State Circuits

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ER -

A 0.7-V MOSFET-only switched-opamp ΣΔ modulator in standard digital CMOS technology

Abstract

Keywords

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