A 0.7 V MOSFET-only switched-opamp ΣΔ modulator

Jens Sauerbrey; Thomas Tille; Doris Schmitt-Landsiedel; Roland Thewes

A 0.7 V MOSFET-only switched-opamp ΣΔ modulator

Jens Sauerbrey, Thomas Tille, Doris Schmitt-Landsiedel, Roland Thewes

Infineon Technologies AG

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

A 0.7 V MOSFET-only switched-opamp ΣΔ modulator for speech applications achieves 67 dB SNDR and 75 dB dynamic range. The circuit, occupying O.08 mm² in 0.18 μm CMOS, does not use voltage boosting or low-V_T devices. All capacitors are compensated MOS devices.

Original language	English
Pages (from-to)	310-311+469+305
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
State	Published - 2002
Externally published	Yes
Event	2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States Duration: 3 Feb 2002 → 7 Feb 2002

Cite this

@article{e08b5fa1f4404cae868b08a1a1cce8f9,

title = "A 0.7 V MOSFET-only switched-opamp ΣΔ modulator",

abstract = "A 0.7 V MOSFET-only switched-opamp ΣΔ modulator for speech applications achieves 67 dB SNDR and 75 dB dynamic range. The circuit, occupying O.08 mm2 in 0.18 μm CMOS, does not use voltage boosting or low-VT devices. All capacitors are compensated MOS devices.",

author = "Jens Sauerbrey and Thomas Tille and Doris Schmitt-Landsiedel and Roland Thewes",

year = "2002",

language = "English",

pages = "310--311+469+305",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Solid-State Circuits Conference ; Conference date: 03-02-2002 Through 07-02-2002",

}

TY - JOUR

T1 - A 0.7 V MOSFET-only switched-opamp ΣΔ modulator

AU - Sauerbrey, Jens

AU - Tille, Thomas

AU - Schmitt-Landsiedel, Doris

AU - Thewes, Roland

PY - 2002

Y1 - 2002

N2 - A 0.7 V MOSFET-only switched-opamp ΣΔ modulator for speech applications achieves 67 dB SNDR and 75 dB dynamic range. The circuit, occupying O.08 mm2 in 0.18 μm CMOS, does not use voltage boosting or low-VT devices. All capacitors are compensated MOS devices.

AB - A 0.7 V MOSFET-only switched-opamp ΣΔ modulator for speech applications achieves 67 dB SNDR and 75 dB dynamic range. The circuit, occupying O.08 mm2 in 0.18 μm CMOS, does not use voltage boosting or low-VT devices. All capacitors are compensated MOS devices.

UR - http://www.scopus.com/inward/record.url?scp=0036105137&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036105137

SN - 0193-6530

SP - 310-311+469+305

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

T2 - 2002 IEEE International Solid-State Circuits Conference

Y2 - 3 February 2002 through 7 February 2002

ER -

A 0.7 V MOSFET-only switched-opamp ΣΔ modulator

Abstract

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