A ΣΔ-Modulated Linear-in-dB Attenuator for On-Chip Power Detection with 0.12 dB Resolution in RF SOI CMOS Switch Technology

Ting Li Hsu, Valentyn Solomko, Amelie Hagelauer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, an innovative scheme to boost the resolution of the variable radio-frequency (RF) attenuator is proposed and examined. The attenuator stage modulated by a first-order sigma-delta modulator (ΣΔM) shows a linear-in-dB attenuation profile for the average RF power with high resolution. The proposed attenuator provides a low-power solution for accurate on-chip power measurement with zero quiescent current. The implemented attenuator shows an effective attenuation tuning step size of 0.12 dB from 700 MHz to 6 GHz with a power consumption of only 41.4 μW. The device is designed and fabricated in 90 nm RF SOI CMOS switch technology.

Original languageEnglish
Title of host publication2024 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages79-82
Number of pages4
ISBN (Electronic)9798350359473
DOIs
StatePublished - 2024
Event2024 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2024 - Washington, United States
Duration: 16 Jun 202418 Jun 2024

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Conference

Conference2024 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2024
Country/TerritoryUnited States
CityWashington
Period16/06/2418/06/24

Keywords

  • attenuator
  • CMOS attenuator
  • sub-6 GHz
  • variable attenuator

Fingerprint

Dive into the research topics of 'A ΣΔ-Modulated Linear-in-dB Attenuator for On-Chip Power Detection with 0.12 dB Resolution in RF SOI CMOS Switch Technology'. Together they form a unique fingerprint.

Cite this